Memory Module. MEF64M16G150M3ND Datasheet

MEF64M16G150M3ND Module. Datasheet pdf. Equivalent

Part MEF64M16G150M3ND
Description 1024Mbit 3.3V - NAND Flash Memory Module
Feature MEF64M16XX50X3ND 1024Mbit 3.3V – NAND Flash Memory Module 64MX16 3.3V NAND Flash Memory Module Fea.
Manufacture Elisra
Datasheet
Download MEF64M16G150M3ND Datasheet

MEF64M16XX50X3ND 1024Mbit 3.3V – NAND Flash Memory Module 6 MEF64M16G150M3ND Datasheet
Recommendation Recommendation Datasheet MEF64M16G150M3ND Datasheet





MEF64M16G150M3ND
MEF64M16XX50X3ND
1024Mbit 3.3V – NAND Flash Memory Module
64MX16 3.3V NAND Flash Memory Module
Features
q 3.3V±10% Supply/ Programming
q Access Time: 50ns (Page Read)
q Fast Page Write Cycle Time (200uSec )
q Package type:
66-Pin Ceramic PGA 1.385” SQ
66-Pin Ceramic PGA 1.080” SQ
q 60mA typical erase/program current
q 60mA active read current
q Embedded Program/Erase Algorithms
q Industrial & Military Screening
q 100,000 Erase/Program Cycles
Product Description
The MEF64M16ND is a 1024Megabit 3.3V NAND flash memory MCM, assembled in
multilayered cofired ceramic package, designed for low noise and better ground bounce.
Flowcharts of programming, byte write, block erase and other specifications are identical to
“K9K1G08U0A" specifications and should be used as a reference.
Block Diagram
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: microel@elisra.com
May 2004, Rev. D
1 OF 42



MEF64M16G150M3ND
MEF64M16XX50X3ND
1024Mbit 3.3V – NAND Flash Memory Module
Pin Names
I/O0 ÷ I/O15
Pin Name
CLE1, CLE2
ALE1, ALE2
CE1#, CE2#
WE1#, WE2#
RE# (or OE#)
WP1#, WP2#
RY/BY1#, RY/BY2#
GND (or Vss)
VCC
Note: # Symbol means "Active Low" Signal
Pin Function
Address & Command Inputs
& Data Inputs/Outputs
Command Latch Enables
Address Latch Enables
Chip Enables
Write Enables
Read Enable (or Output Enable)
Hardware write protect inputs
Ready/busy outputs
Ground
Power Supply (+3.3V ±10%)
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: microel@elisra.com
May 2004, Rev. D
2 OF 42





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