NPN Transistor. NTE2680 Datasheet

NTE2680 Transistor. Datasheet pdf. Equivalent

Part NTE2680
Description Silicon NPN Transistor
Feature NTE2680 Silicon NPN Transistor Power, High Speed Switch w/Internal Damper Diode TO3P(H)IS Type Packa.
Manufacture NTE
Datasheet
Download NTE2680 Datasheet

NTE2680 Silicon NPN Transistor Power, High Speed Switch w/In NTE2680 Datasheet
Recommendation Recommendation Datasheet NTE2680 Datasheet





NTE2680
NTE2680
Silicon NPN Transistor
Power, High Speed Switch w/Internal Damper Diode
TO3P(H)IS Type Package
Features:
D CollectorEmitter Sustaining Voltage: VCEO(SUS) = 800V Min.
D High Switching Speed
D Builtin Damper Diode
Applications:
D Horizontal Deflection Output for Color TV Receiver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorEmitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current,
Continuous
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8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base CCuorrnetnintu, oIBus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
CollectorEmitter Sustaining Voltage
EmitterBase Breakdown Voltage
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Collector Cutoff Current
VCEO(SUS)
V(BR)EBO
VCE(sat)
VBE(sat)
ICES
IC = 100mA, IB = 0, L = 25mH
IE = 300mA, IC = 0
IC = 5A, IB = 1.25A
IC = 5A, IB = 1.25A
VVCBEE
=
=
1500V,
0
TC = +125°C
Min Typ Max Unit
800 − − V
8 − −V
− − 3.0 V
− − 1.03 V
− − 1.0 mA
− − 2.0 mA



NTE2680
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Current Gain
hFE VCE = 5V
IC = 500mA
IC = 5A
7.0
4.2
Diode Forward Voltage
VECF IF = 5A
− − 2.2 V
Storage Time
Fall Time
tstg IC = 5A, IB1 = 1A, IB2 = 2.5A
tf
− − 3.75 μs
− − 0.4 μs
.378
(9.6)
.965
(24.5)
.610 (15.5)
.177
(4.5)
.217 (5.5)
.130 (3.3)
.720
(18.3)
Min
BE
C
.177
(4.5)
.215 (5.47)
.138 (3.5)





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