BC858

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (+VBE = 1 V) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 60 °C Junction temperature Small–signal current gain –IC = 2 mA; –VCE = 5 V; f = 1 kHz Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –IC = 200 mA; –VCE = 5 V f = 1 kHz; B = 200 Hz BC856 BC857 BC858 –VCEX max. –VCE0 max. –ICM max. 80 65 50 30 V 45 30 V 200 mA Ptot max. Tj max. 250 mW 150 ° C hfe 75 to 900 fT > 100 ...