BUZ101

BUZ 101 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175°C operating temperature also in TO-220 SMD available Type BUZ 101 VDS 50 V ID 29 A RDS(on) 0.06 Ω Maximum Ratings Parameter Continuous drain current TC = 31 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse ID = 29 A, VDD = 25 V, RGS = 25 Ω L = 83 µH, Tj = 25 °C Reverse diode dv/dt IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Pin 1 G Pin 2 D Pin 3 S Package TO-220 AB Ordering Code C67078-S1350-A2 Symbol ID IDpuls EAS dv/dt VGS Ptot Tj Tstg RthJC RthJA Values 29 Unit A 116 mJ 70 kV/µs 6 ± 20 100 -55 ... + 175 -55 ... + 175 ≤ 1.5 ≤ 75 E 55 / 175 / 56 V W °C K/W S...