Power Transistor. BUZ101 Datasheet

BUZ101 Transistor. Datasheet pdf. Equivalent

Part BUZ101
Description Power Transistor
Feature BUZ 101 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated •.
Manufacture Siemens
Datasheet
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BUZ101
BUZ 101
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Type
BUZ 101
VDS
50 V
ID
29 A
RDS(on)
0.06
Maximum Ratings
Parameter
Continuous drain current
TC = 31 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 29 A, VDD = 25 V, RGS = 25
L = 83 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1350-A2
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
29
Unit
A
116
mJ
70
kV/µs
6
± 20
100
-55 ... + 175
-55 ... + 175
1.5
75
E
55 / 175 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96



BUZ101
BUZ 101
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = -40 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 21 A
Symbol
min.
V(BR)DSS
50
VGS(th)
2.1
IDSS
-
-
-
IGSS
-
RDS(on)
-
Values
typ. max.
Unit
V
--
34
0.1 1
1 100
10 100
10 100
0.036 0.06
µA
nA
µA
nA
Semiconductor Group
2
07/96





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