Document
BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
• Device Marking:
BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC847CDW1T1 = 1G BC848BDW1T1 = 1K BC848CDW1T1 = 1L
MAXIMUM RATINGS Rating
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current –
Continuous
Symbol BC846 BC847 BC848 Unit
VCEO
65
45
30
V
VCBO
80
50
30
V
VEBO 6.0 6.0 5.0 V
IC 100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C
PD
Thermal Resistance, Junction to Ambient
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
Max 380 250
3.0 328
–55 to +150
Unit mW
mW/°C °C/W
°C
http://onsemi.com (3) (2) (1)
Q1 Q2
.