Purpose Transistors. BC848BDW1T1 Datasheet

BC848BDW1T1 Transistors. Datasheet pdf. Equivalent

Part BC848BDW1T1
Description Dual General Purpose Transistors
Feature BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series Dual General Purpose Transistors NPN Duals The.
Manufacture ON Semiconductor
Datasheet
Download BC848BDW1T1 Datasheet

BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series Dual Ge BC848BDW1T1 Datasheet
Dual General Purpose Transistors NPN Duals These transistor BC848BDW1T1 Datasheet
Recommendation Recommendation Datasheet BC848BDW1T1 Datasheet





BC848BDW1T1
BC846BDW1T1,
BC847BDW1T1 Series,
BC848BDW1T1 Series
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
Device Marking:
BC846BDW1T1 = 1B
BC847BDW1T1 = 1F
BC847CDW1T1 = 1G
BC848BDW1T1 = 1K
BC848CDW1T1 = 1L
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current –
Continuous
Symbol BC846 BC847 BC848 Unit
VCEO
65
45
30
V
VCBO
80
50
30
V
VEBO 6.0 6.0 5.0 V
IC 100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR–5 Board (Note 1.)
TA = 25°C
Derate Above 25°C
PD
Thermal Resistance,
Junction to Ambient
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
–55 to +150
Unit
mW
mW/°C
°C/W
°C
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(3) (2) (1)
Q1 Q2
(4) (5)
(6)
6 54
123
SOT–363
CASE 419B
STYLE 1
DEVICE MARKING
1x
1x = Specific Device Code
x1 = B, F, G, K, L
ORDERING INFORMATION
Device
Package
Shipping
BC846BDW1T1 SOT–363 3000 Units/Reel
BC847BDW1T1 SOT–363 3000 Units/Reel
BC847CDW1T1 SOT–363 3000 Units/Reel
BC848BDW1T1 SOT–363 3000 Units/Reel
BC848CDW1T1 SOT–363 3000 Units/Reel
© Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 1
1
Publication Order Number:
BC846BDW1T1/D



BC848BDW1T1
BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CEO
V
65 –
45 –
30 –
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC846 Series
BC847 Series
BC848 Series
V(BR)CES
V
80 –
50 –
30 –
Collector–Base Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CBO
V
80 –
50 –
30 –
Emitter–Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)EBO
V
6.0 –
6.0 –
5.0 –
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
– 15 nA
– 5.0 µA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
BC846B, BC847B, BC848B
BC847C, BC848C
hFE –
– 150 –
– 270 –
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, BC847B, BC848B
BC847C, BC848C
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k,f = 1.0 kHz, BW = 200 Hz)
200 290 450
420 520 800
VCE(sat)
– 0.25 V
– 0.6
VBE(sat)
0.7
– 0.9 –
V
VBE(on)
580
660
700
mV
– – 770
fT 100 –
– MHz
Cobo
NF
– 4.5 pF
dB
– 10
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2





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