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BC848BDW1T1 Dataheets PDF



Part Number BC848BDW1T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual General Purpose Transistors
Datasheet BC848BDW1T1 DatasheetBC848BDW1T1 Datasheet (PDF)

BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC847CDW1T1 = 1G BC848BDW1T1 = 1K BC848CDW1T1 = 1L MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Sy.

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BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC847CDW1T1 = 1G BC848BDW1T1 = 1K BC848CDW1T1 = 1L MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol BC846 BC847 BC848 Unit VCEO 65 45 30 V VCBO 80 50 30 V VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation Per Device FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C PD Thermal Resistance, Junction to Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in Max 380 250 3.0 328 –55 to +150 Unit mW mW/°C °C/W °C http://onsemi.com (3) (2) (1) Q1 Q2 .


BC848CDW1 BC848BDW1T1 BC846BDW1T1


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