Purpose Transistors. BC846BDW1T1 Datasheet

BC846BDW1T1 Transistors. Datasheet pdf. Equivalent

Part BC846BDW1T1
Description Dual General Purpose Transistors
Feature Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose ampli.
Manufacture ETL
Datasheet
Download BC846BDW1T1 Datasheet

BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 Dual General Purpose T BC846BDW1T1 Datasheet
Dual General Purpose Transistors NPN Duals These transistor BC846BDW1T1 Datasheet
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Ser BC846BDW1T1G Datasheet
Recommendation Recommendation Datasheet BC846BDW1T1 Datasheet





BC846BDW1T1
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
6 54
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
Q2
12
Q1
3
See Table
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current -Continuous
V CEO
V CBO
V EBO
IC
BC846
65
80
6.0
100
BC847 BC848
45 30
50 30
6.0 5.0
100 100
Unit
V
V
V
mAdc
6
5
4
1
2
3
SOT-363 /SC-88
CASE 419B STYLE1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Symbol
PD
R θJA
T J , T stg
Max Unit
380 mW
250 mW
3.0
328
–55 to +150
mW/°C
°C/W
°C
Shipping
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
BC846b–1/5



BC846BDW1T1
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 10 mA)
BC846 Series
BC847 Series
V (BR)CEO
BC848 Series
Collector–Emitter Breakdown Voltage
(I C = 10 µA, V EB = 0)
BC846 Series
BC847 Series
V (BR)CES
BC848 Series
Collector–Base Breakdown Voltage
(I C = 10 µA)
BC846 Series
BC847 Series
V (BR)CBO
BC848 Series
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
BC846 Series
BC847 Series
V (BR)EBO
BC848 Series
Collector Cutoff Current
(V CB = 30 V)
(V CB = 30 V, T A = 150°C)
I CBO
Min
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
Typ Max
——
——
——
——
——
——
——
——
——
——
——
——
— 15
— 5.0
Unit
V
V
V
V
nA
µA
ON CHARACTERISTICS
DC Current Gain
(I C = 10 µA, V CE = 5.0 V)
BC846B, BC847B, BC848B
BC847C, BC848C
h FE
— 150 —
— 270 —
(I C = 2.0 mA, V CE = 5.0 V)
BC846B, BC847B, BC848B
BC847C, BC848C
200 290 450
420 520 800
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat)
— 0.25
V
Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA)
— — 0.6
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
V BE(sat)
0.7 —
V
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
— 0.9 —
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)
V BE(on)
580 660 700
mV
Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)
— — 770
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = 10 V, f = 1.0 MHz)
Noise Figure (I C = 0.2 mA,
V CE = 5.0 V dc, R S = 2.0 k, BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C
fT
C obo
NF
100 — — MHz
— 4.5
pF
dB
— — 10
— — 4.0
BC846b–2/5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)