M29W128GH

128Mb 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W128GH, M29W128GL Features Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 12V for fast program (optional) Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25, 30ns – Random access: 60ns1, 70, 80ns Fast program commands: 32-word (64-byte) write buffer Enhanced buffered program commands: 256-word Program time – 16µs per byte/word TYP – Chip program time: 5s with VPPH and 8s without VPPH Memory organization – Uniform blocks: 128 main blocks, 128-Kbytes or 64-Kwords each Program/erase controller – Embedded byte/word program algorithms Program/erase suspend and resume capability – Read from any block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation Unlock bypass, block erase, chip erase, write to buffer, enhanced b...