D-S MOSFET. Si5403DC Datasheet

Si5403DC MOSFET. Datasheet pdf. Equivalent

Part Si5403DC
Description P-Channel 30-V (D-S) MOSFET
Feature New Product P-Channel 30-V (D-S) MOSFET Si5403DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on.
Manufacture Vishay
Datasheet
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Si5403DC
New Product
P-Channel 30-V (D-S) MOSFET
Si5403DC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = - 10 V
- 30
0.044 at VGS = - 4.5 V
ID (A)
6a
6a
Qg (Typ.)
2 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
1206-8 ChipFET®
D
1
APPLICATIONS
• DC/DC Converter
- Load Switch
- Adaptor Switch
S
DD
D
D
S
D
G
Bottom View
Marking Code
BQ XXX
Lot Traceability
and Date Code
Part #
Code
G
D
Ordering Information: Si5403DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 85 °C
TA = 25 °C
TA = 85 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 85 °C
TA = 25 °C
TA = 85 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 30
± 20
- 6a
- 5.8
- 6a, b, c
- 5.2b, c
- 20
- 5.3
- 2.1b, c
6.3
3.3
2.5b, c
1.3b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
t5s
Steady State
RthJA
RthJF
40
15
50 °C/W
20
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 95 °C/W.
Document Number: 68643
S-81443-Rev. A, 23-Jun-08
www.vishay.com
1



Si5403DC
Si5403DC
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 7.2 A
VGS = - 4.5 V, ID = - 6.0 A
Forward Transconductancea
gfs VDS = - 15 V, ID = - 7.2 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 15 V, VGS = - 10 V, ID = - 7.2 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 7.2 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 2.6 Ω
ID - 5.8 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 2.6 Ω
ID - 5.8 A, VGEN = - 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 5.8 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 5.8 A, dI/dt = - 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 30
-1
- 20
1.2
Typ.
Max.
Unit
- 30
5
0.025
0.036
18
V
mV/°C
-3
± 100
-1
-5
0.030
0.044
V
nA
µA
A
Ω
S
1340
215
185
28
15
4.5
7.2
6
50
140
30
18
11
11
37
12
42
23
12
75
210
45
27
17
17
56
18
- 0.8
22
15
13
9
- 5.3
- 20
- 1.2
33
25
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68643
S-81443-Rev. A, 23-Jun-08





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