N-channel MOSFETs. SSM3K361R Datasheet

SSM3K361R MOSFETs. Datasheet pdf. Equivalent

Part SSM3K361R
Description Silicon N-channel MOSFETs
Feature MOSFETs Silicon N-channel MOS (U-MOS-H) SSM3K361R 1. Applications • Power Management Switches • DC-.
Manufacture Toshiba
Datasheet
Download SSM3K361R Datasheet

MOSFETs Silicon N-channel MOS (U-MOS-H) SSM3K361R 1. Applic SSM3K361R Datasheet
Recommendation Recommendation Datasheet SSM3K361R Datasheet





SSM3K361R
MOSFETs Silicon N-channel MOS (U-MOS-H)
SSM3K361R
1. Applications
• Power Management Switches
• DC-DC Converters
2. Features
(1) AEC-Q101 qualified (Note 1)
(2) 175 MOSFET
(3) 4.5 V drive
(4) Low drain-source on-resistance
: RDS(ON) = 65 m(typ.) (@VGS = 4.5 V)
RDS(ON) = 51 m(typ.) (@VGS = 10 V)
(5) HBM: 2-kV class
Note 1: For detail information, please contact to our sales.
3. Packaging and Pin Assignment
SOT-23F
SSM3K361R
1: Gate
2: Source
3: Drain
©2016-2018
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2016-02
2018-04-18
Rev.5.0



SSM3K361R
SSM3K361R
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 100 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
3.5 A
Drain current (pulsed)
(Note 1), (Note 2)
IDP
14
Power dissipation
(Note 3)
PD
1.2 W
Power dissipation
(t = 10 s)
(Note 3)
PD
2.4
Single-pulse avalanche energy
(Note 4)
EAS
9.1 mJ
Avalanche current
IAR 3.5 A
Channel temperature
(Note 5)
Tch
175
Storage temperature
(Note 5)
Tstg
-55 to 175
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 175 .
Note 2: Pulse width 10 ms, Duty 1 %
Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2)
Note 4: VDD = 25 V, Tch = 25 (Initial state), L = 1 mH, RG = 25
Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note:
Note:
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
©2016-2018
Toshiba Electronic Devices & Storage Corporation
2
2018-04-18
Rev.5.0





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