Signal MOSFET. NTR2101P Datasheet

NTR2101P MOSFET. Datasheet pdf. Equivalent

Part NTR2101P
Description Small Signal MOSFET
Feature NTR2101P Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23 Features • Leading Trench Te.
Manufacture ON Semiconductor
Datasheet
Download NTR2101P Datasheet

NTR2101P Small Signal MOSFET −8.0 V, −3.7 A, Single P−Chann NTR2101P Datasheet
Recommendation Recommendation Datasheet NTR2101P Datasheet





NTR2101P
NTR2101P
Small Signal MOSFET
−8.0 V, −3.7 A, Single P−Channel, SOT−23
Features
Leading Trench Technology for Low RDS(on)
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
This is a Pb−Free Device
Applications
High Side Load Switch
DC−DC Conversion
Cell Phone, Notebook, PDAs, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
t 5 s TA = 25°C
TA = 70°C
t5s
VDSS
VGS
ID
PD
−8.0
±8.0
−3.7
−3.0
0.96
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−11
−55 to
150
−1.2
260
Unit
V
V
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State
RqJA
160 °C/W
Junction−to−Ambient − t 5 s
RqJA
130
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
V(BR)DSS
−8.0 V
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RDS(on) Typ
39 mW @ −4.5 V
52 mW @ −2.5 V
79 mW @ −1.8 V
ID Max
−3.7 A
P−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
TR7 MG
G
1
Gate
2
Source
TR7 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
NTR2101PT1G SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 7
1
Publication Order Number:
NTR2101P/D



NTR2101P
NTR2101P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA
−8.0
10
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = −6.4 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±8.0 V
−1.0
−100
±100
mA
nA
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = −250 mA
−0.40
2.7
−1.0 V
mV/°C
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = −4.5 V, ID = −3.5 A
VGS = −2.5 V, ID = −3.0 A
VGS = −1.8 V, ID = −2.0 A
VGS = −5.0 V, ID = −3.5 A
39 52 mW
52 72
79 120
9.0 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
QG(TOT)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = −4.0 V
VGS = −4.5 V, VDS = −4.0 V,
ID = −3.5 A
1173
pF
289
218
12 15 nC
3.8
2.5
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
VGS = −4.5 V, VDD = −4.0 V,
ID = −1.2 A, RG = 6.0 W
7.4
15.75
38
31
15
25
58
51
ns
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −1.2 A
TJ = 25°C
−0.73
−1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2





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