Trench MOSFET. PMV45EN2 Datasheet

PMV45EN2 MOSFET. Datasheet pdf. Equivalent

Part PMV45EN2
Description N-channel Trench MOSFET
Feature PMV45EN2 30 V, N-channel Trench MOSFET 10 January 2017 Product data sheet 1. General description N.
Manufacture NXP
Datasheet
Download PMV45EN2 Datasheet

PMV45EN2 30 V, N-channel Trench MOSFET 10 January 2017 Prod PMV45EN2 Datasheet
PMV45EN2 30 V, N-channel Trench MOSFET 10 January 2017 Prod PMV45EN2 Datasheet
Recommendation Recommendation Datasheet PMV45EN2 Datasheet





PMV45EN2
PMV45EN2
30 V, N-channel Trench MOSFET
10 January 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic level compatible
Very fast switching
Trench MOSFET technology
Enhanced power dissipation capability of 1115 mW
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 4.1 A; Tj = 25 °C
Min Typ Max
- - 30
-20 -
[1] -
-
20
5.1
- 35 42
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit
V
V
A



PMV45EN2
NXP Semiconductors
PMV45EN2
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
D
G
S
017aaa253
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV45EN2
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
7. Marking
Table 4. Marking codes
Type number
PMV45EN2
[1] % = placeholder for manufacturing site code
Marking code[1]
%K9
PMV45EN2
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved
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