N-channel MOSFET. S-L2SK3018WT1G Datasheet

S-L2SK3018WT1G MOSFET. Datasheet pdf. Equivalent

Part S-L2SK3018WT1G
Description N-channel MOSFET
Feature L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1. FEATURES ● We declare that the materia.
Manufacture LRC
Datasheet
Download S-L2SK3018WT1G Datasheet

L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1 S-L2SK3018WT1G Datasheet
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S-L2SK3018WT1G
L2SK3018WT1G
S-L2SK3018WT1G
N-channel MOSFET
100 mA, 30 V
1. FEATURES
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
Low on-resistance.
Fast switching speed.
Easy to parallel.
ESD>500V
Low voltage drive (2.5V) makes this device ideal for portable equipment.
Easily designed drive circuits.
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SK3018WT1G KN 3000/Tape&Reel
L2SK3018WT3G
KN 10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Drain–Source Voltage
Symbol
VDSS
Limits
30
Gate-Source Voltage
VGS
±20
Drain Current
Continuous
ID
±100
Pulsed IDP(Note 1) ±400
Total power dissipation (TC=25°C) PD(Note 2) 200
Channel temperature
Tch 150
Storage temperature
Tstg -55~+150
1.Pw10µs, Duty cycle1%
2 With each pin mounted on the recommended lands.
Unit
V
V
mA
mW
SC70(SOT-323)
Drain (3)
Gate(1)
Gate
Protection
Diode
Source(2)
Drain
3
KN
12
Gate Source
KN = Device Code
M = Month Code
Leshan Radio Company, LTD.
Rev.B Jun 2018
1/5



S-L2SK3018WT1G
L2SK3018WT1G, S-L2SK3018WT1G
N-channel MOSFET
4. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
Characteristic
Symbol
Gate-source leakage
(VGS = ±20V, VDS = 0V)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10μA)
IGSS
VBRDSS
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 30 V)
IDSS
Gate Threshold Voltage
(VDS = 3V, ID = 100µA)
Static Drain–Source On–State Resistance
VGS(th)
(ID = 10mA, VGS = 4V)
RDS(on)
(ID = 1mA, VGS = 2.5V)
Forward transfer admittance
(VDS = 3V, ID = 10mA)
Yfs
Input Capacitance
(VDS = 5 V, VGS = 0, f = 1.0 MHz)
Ciss
Output Capacitance
(VDS = 5 V, VGS = 0, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
(VDS = 5 V, VGS = 0, f = 1.0 MHz)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD =5 V, ID =
10mA,VGS=5V,RL =
500 ,RG = 10 )
Crss
td(on)
tr
td(off)
tf
Min.
-
30
0.8
-
-
20
-
-
-
-
-
-
-
Typ.
-
-
-
5
7
-
13
9
4
15
35
80
80
Max.
±1
-
1
1.5
8
13
-
-
-
-
-
-
-
-
Unit
μA
V
μA
V
Ω
mS
pF
pF
pF
ns
Leshan Radio Company, LTD.
Rev.B Jun 2018
2/5





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