N-Channel MOSFET. L2SK3019LT1G Datasheet

L2SK3019LT1G MOSFET. Datasheet pdf. Equivalent

Part L2SK3019LT1G
Description Silicon N-Channel MOSFET
Feature LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET Applications Interfacing,switching(30V,100mA) .
Manufacture LRC
Datasheet
Download L2SK3019LT1G Datasheet

LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET Applic L2SK3019LT1G Datasheet
Recommendation Recommendation Datasheet L2SK3019LT1G Datasheet





L2SK3019LT1G
LESHAN RADIO COMPANY, LTD.
Silicon N-Channel MOSFET
Applications
Interfacing,switching(30V,100mA)
Features
Low on-resistance
Fast switching speed
Low voltage drive(2.5V) makes this ideal for portable equipment
Drive circuits can be simple
Parallel use is easy
ESD>500
we declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
ORDERING INFORMATION
Device
Marking
Shipping
L2SK3019LT1G
S-L2SK3019LT1G
KN
3000/Tape & Reel
L2SK3019LT3G
S-L2SK3019LT3G
KN
10,000/Tape & Reel
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Total Power Dissipation 2)
VGS
ID
IDM
PD
Operating Junction and Storage Temperature Range
1) Pw10µs, Duty cycle1%
2) With each pin mounted on the recommended lands.
TJ, Tstg
L2SK3019LT1G
S-L2SK3019LT1G
3
1
2
SOT– 23
Equivalent circuit
Drain
3
1
Gate
Gate
Protection
Diode
Source
2
A por tection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Limit
30
± 20
± 100
± 400
225
-55 to 150
Unit
V
mA
mW
oC
Rev .A 1/4



L2SK3019LT1G
LESHAN RADIO COMPANY, LTD.
L2SK3019LT1G,S-L2SK3019LT1G
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
30
0.8
20
Typ.
5
7
13
9
4
15
35
80
80
Max.
±1
1.0
1.5
8
13
Unit Conditions
µA VGS20V, VDS=0V
V ID=10µA, VGS=0V
µA VDS=30V, VGS=0V
V VDS=3V, ID=100µA
ID=10mA, VGS=4V
ID=1mA, VGS=2.5V
ms ID=10mA, VDS=3V
pF VDS=5V
pF VGS=0V
pF f=1MHz
ns ID=10mA, VDD 5V
ns VGS=5V
ns RL=500
ns RG=10
zElectrical characteristic curves
0.15
4V
3V
Ta=25°C
3.5V
Pulsed
0.1
2.5V
0.05
2V
VGS=1.5V
0
01 2 34 5
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical output characteristics
200m
VDS=3V
100m Pulsed
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
0
Ta=125°C
75°C
25°C
25°C
123
GATE-SOURCE VOLTAGE : VGS (V)
4
Fig.2 Typical transfer characteristics
2 VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
0
50 25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
50
20 Ta=125°C
75°C
25°C
10 25°C
5
VGS=4V
Pulsed
2
1
0.5
0.001 0.002
0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
50
Ta=125°C
75°C
20 25°C
25°C
10
5
VGS=2.5V
Pulsed
2
1
0.5
0.001 0.002
0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
15 Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
Rev .A 2/4





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