Enhancement-Mode MOSFET. S-LN2302ALT1G Datasheet

S-LN2302ALT1G MOSFET. Datasheet pdf. Equivalent

Part S-LN2302ALT1G
Description 20V N-Channel Enhancement-Mode MOSFET
Feature LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V .
Manufacture LRC
Datasheet
Download S-LN2302ALT1G Datasheet

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode M S-LN2302ALT1G Datasheet
Recommendation Recommendation Datasheet S-LN2302ALT1G Datasheet





S-LN2302ALT1G
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
FEATURES
RDS(ON)85m@VGS=4.5V
RDS(ON)115m@VGS=2.5V
RDS(ON)135m@VGS=1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
APPLICATIONS
Power Management in Notebook
Portable Equipment
Load Switch
DSC
Ordering Information
Device
LN2302ALT1G
S-LN2302ALT1G
LN2302ALT3G
S-LN2302ALT3G
Marking
02A
02A
Shipping
3000/Tape& Reel
10000/Tape& Reel
LN2302ALT1G
S-LN2302ALT1G
3
1
2
SOT– 23
3
1
2
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDSS
20
Gate-Source Voltage
VGSS
±8
Continuous Drain
Current(tJ=150)
TA=25
TA=70
ID
2.8
2.2
Pulsed Drain Current
IDM 10
Maximum Body-Diode Continuous Current
IS
1.6
Maximum Power Dissipation
TA=25
TA=70
PD
1.25
0.8
Operating Junction Temperature
TJ 150
Maximum Junction-to-Ambient
RthJA
T10 sec
Steady State
Thermal Resistance-Junction to Case
RθJC
70
*The device mounted on 1in2 FR4 board with 2 oz copper
77
105
Unit
V
V
A
A
W
℃/W
℃/W
Rev .O 1/5



S-LN2302ALT1G
LESHAN RADIO COMPANY, LTD.
LN2302ALT1G , S-LN2302ALT1G
ELECTRICAL CHARACTERISTICS
Symbol Parameter
STATIC PARAMETERS
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
ID(ON)
On-State Drain Current a
RDS(ON)
Drain-Source On-Resistance
VSD Diode Forward Voltage
DYNAMIC PARAMETERS
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±8V
VDS=20V, VGS=0V
VDS=20V, VGS=0V
TJ=55
VDS5V, VGS= 4.5V
VDS5V, VGS= 2.5V
VGS=4.5V, ID= 2.8A
VGS=2.5V, ID= 2.5A
VGS=1.8V, ID= 2.2A
IS=1A, VGS=0V
20
0.6 0.9
1.2
V
±100 nA
1
μA
10
6
A
4
55 85
65 115 mΩ
80 130
0.75 1.2
V
VDS=10V, VGS=4.5V, ID=2.8A
VDS=10V, VGS=0V, f=1MHZ
VDD=10V, RL =10Ω
VGEN=4.5Ω, RG=6Ω
9
2.2
3
450
72
22
9
23
38
3
nC
pF
ns
Notes:
a. Pulse test; pulse width300us, duty cycle2%
Rev .O 2/5





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