Power MOSFET. LBSS139LT1G Datasheet

LBSS139LT1G MOSFET. Datasheet pdf. Equivalent

Part LBSS139LT1G
Description Power MOSFET
Feature .
Manufacture LRC
Datasheet
Download LBSS139LT1G Datasheet

LBSS139LT1G Datasheet
Recommendation Recommendation Datasheet LBSS139LT1G Datasheet





LBSS139LT1G
LBSS139LT1G
S-LBSS139LT1G
Power MOSFET
200 mAmps, 50 Volts N–Channel SOT-23
1. FEATURES
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low
voltage applications.
ESD Protected:1500V
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS139LT1G
J2 3000/Tape&Reel
LBSS139LT3G
J2 10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Drain–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous TA = 25°C
– Pulsed (tp10μs)
Symbol
VDSS
VGS
ID
IDM
Limits
50
±20
200
800
Unit
Vdc
Vdc
mAdc
4. THERMAL CHARACTERISTICS
Parameter
Symbol
Total Device Dissipation,
FR−4 Board (Note 1) @ TA = 25ºC
PD
Derate above 25ºC
Thermal Resistance,
RΘJA
Junction–to–Ambient(Note 1)
Junction and Storage temperature
TJ,Tstg
Maximum Lead Temperature for Soldering TL
Purposes, for 10 seconds
1. FR–4 = 1.0×0.75×0.062 in.
Limits
225
Unit
mW
1.8 mW/ºC
556 ºC/W
−55+150 ºC
260 ºC
SOT23(TO-236)
Leshan Radio Company, LTD.
Rev.C Jan 2016
1/7



LBSS139LT1G
LBSS139LT1G, S-LBSS139LT1G
Power MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250μAdc)
Zero Gate Voltage Drain Current
Symbol
VBRDSS
Min.
50
Typ. Max.
--
Unit
Vdc
μAdc
(VGS = 0, VDS = 25 Vdc)
IDSS
-
- 0.1
(VGS = 0, VDS = 50 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = - 20 Vdc)
IGSSF
IGSSR
-
-
-
- 0.5
μAdc
- 10.0
μAdc
- -10
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0mAdc)
Static Drain–Source On–State Resistance
VGS(th)
RDS(on)
0.5
Vdc
- 1.5
Ohms
(VGS = 2.75 Vdc, ID < 200 mAdc,
TA = –40°C to +85°C)
- 5.6 10
(VGS = 5.0 Vdc, ID = 200 mAdc)
- - 3.5
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
gfs
100 -
mS
-
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
- 22.8 -
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
- 3.5 -
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
- 2.9 -
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
(VDD = 30 Vdc , VGEN =
10 V,RG =25Ω ,RL =60
td(on)
-
3.8
-
Ω,ID =500 mAdc)
Turn-Off Delay Time
td(off)
-
19
-
2.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
ns
Leshan Radio Company, LTD.
Rev.C Jan 2016
2/7





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)