Enhancement-Mode MOSFET. S-LN2308LT1G Datasheet

S-LN2308LT1G MOSFET. Datasheet pdf. Equivalent

Part S-LN2308LT1G
Description 60V N-Channel Enhancement-Mode MOSFET
Feature LESHAN RADIO COMPANY, LTD. 60V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦100mΩ@VGS=10V.
Manufacture LRC
Datasheet
Download S-LN2308LT1G Datasheet

LESHAN RADIO COMPANY, LTD. 60V N-Channel Enhancement-Mode M S-LN2308LT1G Datasheet
Recommendation Recommendation Datasheet S-LN2308LT1G Datasheet





S-LN2308LT1G
LESHAN RADIO COMPANY, LTD.
60V N-Channel Enhancement-Mode MOSFET
FEATURES
RDS(ON) 100m@VGS=10V
RDS(ON) 130m@VGS=4.5V
RDS(ON) 200m@VGS=3.3V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
Capable doing Cu wire bonding
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
Ordering Information
Device
LN2308LT1G
S-LN2308LT1G
LN2308LT3G
S-LN2308LT3G
Marking
N08
N08
Shipping
3000/Tape& Reel
10000/Tape& Reel
LN2308LT1G
S-LN2308LT1G
3
1
2
SOT– 23
3
1
2
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGSS
±20
Continuous Drain
Current(tJ=150)
TA=25
TA=70
ID
2.6
1.8
Pulsed Drain Current
IDM 8
Maximum Body-Diode Continuous Current
IS
1.6
Maximum Power Dissipation
TA=25
TA=70
PD
0.7
0.45
Operating Junction Temperature
TJ 150
Maximum Junction-to-Ambient
RthJA
T10 sec
Steady State
Thermal Resistance-Junction to Case
RθJC
120
*The device mounted on 1in2 FR4 board with 2 oz copper
150
175
Unit
V
V
A
A
W
℃/W
℃/W
Rev.B 1/6



S-LN2308LT1G
LESHAN RADIO COMPANY, LTD.
LN2308LT1G , S-LN2308LT1G
Electrical Characteristics (Ta=25Unless Otherwise Specified)
Rev.B 2/6





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