L2N7002FDW1T1G Signal MOSFET Datasheet

L2N7002FDW1T1G Datasheet, PDF, Equivalent


Part Number

L2N7002FDW1T1G

Description

Small Signal MOSFET

Manufacture

LRC

Total Page 5 Pages
Datasheet
Download L2N7002FDW1T1G Datasheet


L2N7002FDW1T1G
Small Signal MOSFET
30 Volts
N–Channel SC–88
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
FEATURES
RDS(ON) 8@VGS=4V
RDS(ON) 13@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
Capable doing Cu wire bonding
ESD Protected:1000V
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002FDW1T1G
S-L2N7002FDW1T1G
72F
3000 Tape & Reel
L2N7002FDW1T3G
S-L2N7002FDW1T3G
72F
10000 Tape & Reel
LESHAN RADIO COMPANY, LTD.
L2N7002FDW1T1G
S-L2N7002FDW1T1G
Simplified Schematic
321
D2 G1 S1
S2 G2 D1
45
6
(Top View)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Max Unit
225 mW
1.8 mW/°C
556
300
2.4
417
-55 to
+150
°C/W
mW
mW/°C
°C/W
°C
Rev .O 1/4

L2N7002FDW1T1G
LESHAN RADIO COMPANY, LTD.
L2N7002FDW1T1G,S-L2N7002FDW1T1G
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Maximum Ratings
30
±20
Electrical Characteristics (Tj =25Unless Otherwise Specified)
Unit
V
V
Symbol Parameter
Limit
Min Typ
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
30
0.8
IGSS
IDSS
RDS(ON)
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance*
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
5
7
VSD Diode Forward Voltage *
IS=200mA, VGS=0V
DYNAMIC
Qg Total Gate Charge
4.9
Qgs Gate-Source Charge
VDS=25V, VGS=10V, ID=0.22A
2.1
Qgd Gate-Drain Charge
0.6
Ciss Input Capacitance
21
Coss
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
10
Crss
td(on)
tr
td(off)
tf
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=5V, RL =500Ω
VGES=5V,RG=10Ω
2
10.1
7.3
31.3
28.2
Notes: * . Pulse test; pulse width 300us, duty cycle2%.
Max
1.5
±10
1
8
13
1.2
Unit
V
V
μA
μA
Ω
V
nC
pF
ns
Rev .O 2/4


Features Small Signal MOSFET 30 Volts N–Channel SC–88 • We declare that the materi al of product are Halogen Free and comp liance with RoHS requirements. • S- P refix for Automotive and Other Applicat ions Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. FEATURES ● RDS(ON ) ≦8Ω@VGS=4V ● RDS(ON) ≦13Ω@V GS=2.5V ● Super high density cell des ign for extremely low RDS(ON) ● Excep tional on-resistance and maximum DC cur rent capability ● Capable doing Cu wi re bonding ● ESD Protected:1000V APPL ICATIONS ● Power Management in Note b ook ● Portable Equipment ● Battery Powered System ● Load Switch ORDERIN G INFORMATION Device Marking Shippin g L2N7002FDW1T1G S-L2N7002FDW1T1G 72F 3000 Tape & Reel L2N7002FDW1T3G S-L2 N7002FDW1T3G 72F 10000 Tape & Reel L ESHAN RADIO COMPANY, LTD. L2N7002FDW1T1 G S-L2N7002FDW1T1G Simplified Schemati c 321 D2 G1 S1 S2 G2 D1 45 6 (Top V iew) THERMAL CHARACTERISTICS Characteristic Total Device Dissi.
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