N-Channel/PN Duals. S-LBSS138V3.3T1G Datasheet

S-LBSS138V3.3T1G Duals. Datasheet pdf. Equivalent

Part S-LBSS138V3.3T1G
Description Dual Integrated Circuit N-Channel/PN Duals
Feature LESHAN RADIO COMPANY, LTD. Dual Integrated Circuit N-Channel/PN Duals • We declare that the mater.
Manufacture LRC
Datasheet
Download S-LBSS138V3.3T1G Datasheet

LESHAN RADIO COMPANY, LTD. Dual Integrated Circuit N-Chann S-LBSS138V3.3T1G Datasheet
Recommendation Recommendation Datasheet S-LBSS138V3.3T1G Datasheet





S-LBSS138V3.3T1G
LESHAN RADIO COMPANY, LTD.
Dual Integrated Circuit
N-Channel/PN Duals
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATING
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RθJA
TL
Value
50
± 20
200
800
225
– 55 to
150
556
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
ORDERING INFORMATION
Device
LBSS138V3.3T1G
S-LBSS138V3.3T1G
LBSS138V3.3T3G
S-LBSS138V3.3T3G
Marking
H02
H02
Shipping
3000/Tape&Reel
10000/Tape&Reel
ELECTRICAL CHARACTERISTICS (Q2)
(TA = 25°C unless otherwise noted,
VF = 0.9 V Max. @ IF = 10 mA for all types)
Symbol
Parameter
VZ
IZT
ZZT
IZK
ZZK
IR
VR
IF
VF
QVZ
C
Reverse Zener Voltage @ IZT
Reverse Current
Maximum Zener Impedance @ IZT
Reverse Current
Maximum Zener Impedance @ IZK
Reverse Leakage Current @ VR
Reverse Voltage
Forward Current
Forward Voltage @ IF
Maximum Temperature Coefficient of VZ
Max. Capacitance @VR = 0 and f = 1 MHz
LBSS138V3.3T1G
S-LBSS138V3.3T1G
SC-74
6
Q1
5
4
Q2
12
3
MARKING DIAGRAM
H02
1
H02 = Device Code
M = Month Code
I
IF
VZ VR
IIRZT VF
V
Zener Voltage Regulator
Rev .O 1/3



S-LBSS138V3.3T1G
LESHAN RADIO COMPANY, LTD.
LBSS138V3.3T1G , S-LBSS138V3.3T1G
ELECTRICAL CHARACTERISTICS( Q1) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
td(on)
td(off)
Min
50
0.5
100
ELECTRICAL CHARACTERISTICS( Q2) (TA = 25°C unless otherwise noted)
Characteristic
Reverse Zener Voltage @ I ZT =5mA
Maximum Zener Impedance @ I ZT =5mA
Maximum Zener Impedance @ I ZK =0.5mA
Reverse Leakage Current @ V R =1.0V
Forward Voltage @ I F =10mA
Maximum Temperature Coefficient of VZ
I ZT =5mA
Max. Capacitance @ VR = 0,f = 1 MHz
Symbol
VZ (Volts)
Min
3.1
ZZT
ZZK
IR
VF
QVZ
–3.5
C
2. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
Typ
5.6
40
12
3.5
Typ
3.3
450
Max Unit
– Vdc
µAdc
0.1
0.5
±0.1 µAdc
1.5 Vdc
Ohms
10
3.5
– mmhos
50 pF
25
5.0
20 ns
20
Max
3.5
95
1000
5
Unit
V
W
W
mA
0.9 V
0 mV/k
pF
Rev .O 2/3





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