Power MOSFET. S-LBSS84DW1T1G Datasheet

S-LBSS84DW1T1G MOSFET. Datasheet pdf. Equivalent

Part S-LBSS84DW1T1G
Description Power MOSFET
Feature LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SC88 LBSS84DW1T1G S-LBSS8.
Manufacture LRC
Datasheet
Download S-LBSS84DW1T1G Datasheet

LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volt S-LBSS84DW1T1G Datasheet
Recommendation Recommendation Datasheet S-LBSS84DW1T1G Datasheet





S-LBSS84DW1T1G
LESHAN RADIO COMPANY, LTD.
Power MOSFET
130 mAmps, 50 Volts
P–Channel SC88
LBSS84DW1T1G
S-LBSS84DW1T1GThese miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered
products such as computers, printers, cellular and cordless telephones.
Energy Efficient
Miniature SC88 Surface Mount Package Saves Board Space
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RθJA
TL
Value
50
± 20
130
520
380
– 55 to
150
328
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
321
D2 G1 S1
S2 G2 D1
45
6
ORDERING INFORMATION
Device
Marking
Shipping
LBSS84DW1T1G
S-LBSS84DW1T1G
LBSS84DW1T1G
S-LBSS84DW1T1G
PD
PD
3000 Tape & Reel
10000 Tape & Reel
Rev .A 1/5



S-LBSS84DW1T1G
LESHAN RADIO COMPANY, LTD.
LBSS84DW1T1G , S-LBSS84DW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate–Source Threaded Voltage
(VDS = VGS, ID = 250µ Adc)
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc)
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = –15 Vdc, ID = –2.5 Adc,
RL = 50 )
Fall Time
Gate Charge
td(on)
tr
td(off)
tf
QT
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Min
50
0.8
Typ Max Unit
– – Vdc
µAdc
– 0.1
– 15
– 60
±100
nAdc
– 2.0 Vdc
5.0 10 Ohms
42
20
4
13
6
16
3
6000
pF
ns
pC
Rev .A 2/5





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