Power MOSFET. LBSS138DW1T1G Datasheet

LBSS138DW1T1G MOSFET. Datasheet pdf. Equivalent

Part LBSS138DW1T1G
Description Power MOSFET
Feature LBSS138DW1T1G S-LBSS138DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 1. FEATURES ● We dec.
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Datasheet
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LBSS138DW1T1G S-LBSS138DW1T1G Power MOSFET 200 mAmps, 50 Vol LBSS138DW1T1G Datasheet
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LBSS138DW1T1G
LBSS138DW1T1G
S-LBSS138DW1T1G
Power MOSFET
200 mAmps, 50 Volts N–Channel SC-88
1. FEATURES
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low
voltage applications.
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS138DW1T1G
J1
3000/Tape&Reel
LBSS138DW1T3G
J1
10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Drain–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous TA = 25°C
– Pulsed (tp10μs)
Symbol
VDSS
VGS
ID
IDM
Limits
50
±20
200
800
Unit
Vdc
Vdc
mAdc
4. THERMAL CHARACTERISTICS
Parameter
Symbol
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25ºC
PD
Derate above 25ºC
Thermal Resistance,
RΘJA
Junction–to–Ambient(Note 1)
Junction and Storage temperature
TJ,Tstg
Maximum Lead Temperature for Soldering TL
Purposes, for 10 seconds
1. FR–5 = 1.0×0.75×0.062 in.
Limits
225
Unit
mW
1.8 mW/ºC
556 ºC/W
−55+150 ºC
260 ºC
SC88(SOT-363)
Leshan Radio Company, LTD.
Rev.B Mar 2016
1/6



LBSS138DW1T1G
LBSS138DW1T1G, S-LBSS138DW1T1G
Power MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250μAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 25 Vdc)
(VGS = 0, VDS = 50 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = - 20 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0mAdc)
Static Drain–Source On–State Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc,
TA = –40°C to +85°C)
Symbol
VBRDSS
IDSS
IGSSF
IGSSR
Min.
50
-
-
-
-
Typ. Max.
--
- 0.1
- 0.5
- 0.1
- -0.1
Unit
Vdc
μAdc
μAdc
μAdc
VGS(th)
RDS(on)
0.5
-
Vdc
- 1.5
Ohms
5.6 10
(VGS = 5.0 Vdc, ID = 200 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
- - 3.5
gfs
100 -
-
Ciss
- 40 50
mS
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Coss
Ciss
-
-
12 25
3.5 5.0
pF
pF
ns
Turn-On Delay Time
(VDD = 30 Vdc , ID =200
mAdc)
td(on)
-
- 20
Turn-Off Delay Time
td(off)
2.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
-
- 20
Leshan Radio Company, LTD.
Rev.B Mar 2016
2/6





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