T2N7002BK

MOSFETs Silicon N-Channel MOS T2N7002BK 1. Applications High-Speed Switching 2. Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT23 T2N7002BK 1: Gate 2: Source 3: Drain ©2015-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-05 2017-11-30 Rev.2.0 T2N7002BK 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed) (Note 1) (Note 1), (Note 2) ID IDP 400 1200 mA Power dissipation (Note 3) PD 320 mW Power dissipation (Note 4) 1000 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/c...