Rectifier Diode. 80EPS12 Datasheet

80EPS12 Datasheet PDF, Equivalent


Part Number

80EPS12

Description

Input Rectifier Diode

Manufacture

Vishay

Total Page 6 Pages
PDF Download
Download 80EPS12 Datasheet


80EPS12 Datasheet
80EPS.. High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 80 A
Base
cathode
4, 2
TO-247AC
PRODUCT SUMMARY
VF at 80 A
IFSM
VRRM
1
Anode
3
Anode
1.17 V
1450 A
800/1200 V
DESCRIPTION/FEATURES
The 80EPS.. rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product has been designed and qualified for industrial
level.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Sinusoidal waveform
Range
IFSM
VF 80 A, TJ = 25 °C
TJ
VALUES
80
800/1200
1450
1.17
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
80EPS08
80EPS12
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
IRRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
IF(AV)
IFSM
TC = 100 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
I2t 10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
I2t t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
80
1450
1500
10 500
14 000
105 000
UNITS
A
A2s
A2s
Document Number: 93524
Revision: 07-Jul-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
1

80EPS12 Datasheet
80EPS.. High Voltage Series
Vishay High Power Products Input Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
Threshold voltage
rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
80 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.17
3.17
0.73
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
RthJA
RthCS
Mounting surface, flat, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC (JEDEC)
VALUES
- 40 to 150
UNITS
°C
0.35
40 °C/W
0.2
6g
0.21 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
80EPS08
80EPS12
www.vishay.com
2
For technical questions, contact: diodestech@vishay.com
Document Number: 93524
Revision: 07-Jul-09


Features Datasheet pdf 80EPS.. High Voltage Series Vishay High Power Products Input Rectifier Diode, 8 0 A Base cathode 4, 2 TO-247AC PRODUC T SUMMARY VF at 80 A IFSM VRRM 1 Anode 3 Anode 1.17 V 1450 A 800/1200 V DE SCRIPTION/FEATURES The 80EPS.. rectifie r High Voltage Series has been optimize d for very low forward voltage drop, wi th moderate leakage. The glass passivat ion technology used has reliable operat ion up to 150 °C junction temperature. Typical applications are in input rect ification and these products are design ed to be used with Vishay HPP switches and output rectifiers which are availab le in identical package outlines. This product has been designed and qualified for industrial level. MAJOR RATINGS A ND CHARACTERISTICS SYMBOL CHARACTERIS TICS IF(AV) VRRM Sinusoidal waveform Range IFSM VF 80 A, TJ = 25 °C TJ V ALUES 80 800/1200 1450 1.17 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PA RT NUMBER 80EPS08 80EPS12 VRRM, MAXIMU M PEAK REVERSE VOLTAGE V 800 1200 VRSM, MAXIMUM NON-REPETITIVE.
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