RECTIFIER DIODE. 80EPS12PbF Datasheet

80EPS12PbF Datasheet PDF, Equivalent


Part Number

80EPS12PbF

Description

INPUT RECTIFIER DIODE

Manufacture

International Rectifier

Total Page 6 Pages
PDF Download
Download 80EPS12PbF Datasheet


80EPS12PbF Datasheet
INPUT RECTIFIER DIODE
Lead-Free ("PbF" suffix)
Bulletin I2202 rev. A 03/06
SAFEIR Series
80EPS..PbF
VF < 1.17V @ 80A
IFSM = 1450A
VRRM = 800 -1200V
Major Ratings and Characteristics
Characteristics
Values Units
IF(AV) Sinusoidal
waveform
VRRM range
IFSM
VF @80A, TJ = 25°C
TJ
80
800-1200
1450
1.17
- 40 to 150
A
V
A
V
°C
Description/ Features
The 80EPS..PbF rectifier SAFEIR series has been opti-
mized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has
reliable operation up to 150° C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with International
Rectifier Switches and Output Rectifiers which are avail-
able in identical package outlines.
Case Styles
www.irf.com
TO-247AC
BASE
CATHODE
2
13
CATHODE ANODE
1

80EPS12PbF Datasheet
80EPS..PbF SAFEIR Series
Bulletin I2202 rev. A 03/06
Voltage Ratings
Part Number
80EPS08PbF
80EPS12PbF
VRRM , maximum
peak reverse voltage
V
800
1200
VRSM , maximum non repetitive
peak reverse voltage
V
900
1300
IRRM
150°C
mA
1
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
IFSM Max.PeakOneCycleNon-Repetitive
Surge Current
I2t Max. I2t for fusing
I2t Max. I2t for fusing
80EPS..
80
1450
1500
10500
14000
105000
Units
Conditions
A
A
A2s
A2s
@ TC = 100° C, 180° conduction half sine wave
10ms Sine pulse, rated VRRMapplied
10msSine pulse,novoltagereapplied
10ms Sine pulse, rated VRRMapplied
10msSinepulse, novoltagereapplied
t = 0.1 to 10ms, no voltage reapplied
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop
rt Forward slope resistance
VF(TO) Threshold voltage
IRM Max. Reverse Leakage Current
80EPS..
1.17
3.17
0.73
0.1
1.0
Units
V
mΩ
V
mA
Conditions
@ 80A, TJ = 25°C
TJ = 150°C
TJ = 25 °C
TJ = 150 °C
VR = rated VRRM
Thermal-Mechanical Specifications
Parameters
80EPS.. Units
TJ Max. Junction Temperature Range
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance Junction
to Case
RthJA Max. Thermal Resistance Junction
to Ambient
- 40 to 150
- 40 to 150
0.35
°C
°C
°C/W
40 °C/W
RthCS Typical Thermal Resistance, Case to
Heatsink
wt Approximate Weight
T MountingTorque
Min.
Max.
Case Style
Marking Device
0.2 °C/W
6 (0.21) g (oz.)
6 (5) Kg-cm
12 (10) (Ibf-in)
TO-247AC
80EPS12
Conditions
DC operation
Mounting surface , smooth and greased
JEDEC
2 www.irf.com


Features Datasheet pdf INPUT RECTIFIER DIODE Lead-Free ("PbF" s uffix) Bulletin I2202 rev. A 03/06 SAF EIR Series 80EPS..PbF VF < 1.17V @ 80A IFSM = 1450A VRRM = 800 -1200V Major R atings and Characteristics Characteris tics Values Units IF(AV) Sinusoidal w aveform VRRM range IFSM VF @80A, TJ = 2 5°C TJ 80 800-1200 1450 1.17 - 40 to 150 A V A V °C Description/ Features The 80EPS..PbF rectifier SAFEIR series has been optimized for very low forwar d voltage drop, with moderate leakage. The glass passivation technology used h as reliable operation up to 150° C jun ction temperature. Typical applications are in input rectification and these p roducts are designed to be used with In ternational Rectifier Switches and Outp ut Rectifiers which are available in id entical package outlines. Case Styles www.irf.com TO-247AC BASE CATHODE 2 13 CATHODE ANODE 1 80EPS..PbF SAFEIR S eries Bulletin I2202 rev. A 03/06 Volt age Ratings Part Number 80EPS08PbF 80EP S12PbF VRRM , maximum peak reverse voltage V 800 1200 VRSM , .
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