N-channel MOSFET. MMF60R280Q Datasheet

MMF60R280Q MOSFET. Datasheet pdf. Equivalent

Part MMF60R280Q
Description N-channel MOSFET
Feature MMF60R280Q Datasheet MMF60R280Q 600V 0.28Ω N-channel MOSFET  Description MMF60R280Q is power MOSFE.
Manufacture MagnaChip
Datasheet
Download MMF60R280Q Datasheet

MMF60R280Q Datasheet MMF60R280Q 600V 0.28Ω N-channel MOSFET MMF60R280Q Datasheet
Recommendation Recommendation Datasheet MMF60R280Q Datasheet





MMF60R280Q
MMF60R280Q Datasheet
MMF60R280Q
600V 0.28N-channel MOSFET
Description
MMF60R280Q is power MOSFET using magnachips advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Parameter
VDS @ Tj,max
RDS(on),max
VTH,typ
ID
Qg,typ
Value
650
0.28
3
13.8
25
Unit
V
V
A
nC
Package & Internal Circuit
D
G
D
S
G
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Ordering Information
Order Code
MMF60R280QTH
Marking
60R280Q
Temp. Range
-55 ~ 150oC
Package
TO-220F
Packing
Tube
RoHS Status
Compliant
Jun. 2017 Revision 1.0
1 MagnaChip Semiconductor Ltd.



MMF60R280Q
MMF60R280Q Datasheet
Absolute Maximum Rating (Tc=25oC unless otherwise specified)
Parameter
Drain Source voltage
Gate Source voltage
Symbol
VDSS
VGSS
Continuous drain current(1)
ID
Pulsed drain current(2)
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Diode dv/dt ruggedness(3)
Storage temperature
Maximum operating junction
temperature
1) Id limited by maximum junction temperature
2) Pulse width tP limited by Tj,max
3) ISD ID, VDS peak V(BR)DSS
IDM
PD
EAS
dv/dt
dv/dt
Tstg
Tj
Rating
600
±30
13.8
8.7
41.4
31
290
50
15
-55 ~150
150
Unit
V
V
A
A
A
W
mJ
V/ns
V/ns
oC
oC
Note
TC = 25oC
TC = 100oC
Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
Rthjc
Rthja
Value
4.05
75
Unit
oC/W
oC/W
Jun. 2017 Revision 1.0
2 MagnaChip Semiconductor Ltd.





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)