N-Channel PowerTrench MOSFET
FDT86246L N-Channel PowerTrench® MOSFET
February 2016
FDT86246L
N-Channel PowerTrench® MOSFET
150 V, 2 A, 228 mΩ
Feat...
Description
FDT86246L N-Channel PowerTrench® MOSFET
February 2016
FDT86246L
N-Channel PowerTrench® MOSFET
150 V, 2 A, 228 mΩ
Features
General Description
Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package Fast switching speed 100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
Load Switch Primary Switch Buck/Boost Switch
D D
SOT-223
S
D G
GDS
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power...
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