Switching Diode. MMBD7000-V Datasheet

MMBD7000-V Diode. Datasheet pdf. Equivalent

Part MMBD7000-V
Description Small Signal Switching Diode
Feature Small Signal Switching Diode, Dual MMBD7000-V Vishay Semiconductors Description Silicon Epitaxial .
Manufacture Vishay
Datasheet
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MMBD7000-V
Small Signal Switching Diode, Dual
MMBD7000-V
Vishay Semiconductors
Description
Silicon Epitaxial Planar Diode
Fast switching dual diode, especially suited for auto-
matic insertion
Features
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/
95/EC and WEEE 2002/96/EC
e3
3
12
18109
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
MMBD7000-V
Ordering code
MMBD7000-V-GS18 or MMBD7000-V-GS08
M5C
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current (continuous)
Non-repetitive peak forward
current
t=1s
Power dissipation
on FR-5 board
TA = 25 °C
Derate above 25 °C
Total device dissipation
on Alumina substrate
TA = 25 °C
Derate above 25 °C
Symbol
VR
IF
IFSM
Ptot
Ptot
Ptot
Ptot
Value
100
200
500
225
1.8
300
2.4
Unit
V
mA
mA
mW
mW/°C
mW
mW/°C
1



MMBD7000-V
MMBD7000-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
Junction to ambient air
Maximum junction temperature
Storage temperature range
1) Device on alumina substrate
2) On FR-5 board
Test condition
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
IR = 100 µA
Leakage current
VR = 50 V
VR = 100 V
VR = 50 V, Tj = 125 ° C
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 100 mA
Diode capacitance
VR = 0, f = 1 MHz
Reverse recovery time
IF = 10 mA to IR = 10 mA,
Irr = 1 mA, RL = 100
Package Dimensions in mm (Inches)
Symbol
RthJA
RthJA
Tj
TS
Value
4171)
5562)
150
- 55 to + 150
Unit
°C/W
mW/°/W
°C
°C
Symbol
Min
Typ.
Max
Unit
VBR 100
V
IR 1.0 µA
IR 3.0 µA
IR 100 µA
VF 0.55
0.70 V
VF 0.67
0.82 V
VF 0.75
1.10 V
Ctot 1.5 pF
Irr 4.0 ns
0.4 (.016) 0.4 (.016)
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
Mounting Pad Layout
0.52 (0.020)
ISO Method E
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
2





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