MOSFET. B0210D Datasheet

B0210D Datasheet PDF


Part

B0210D

Description

N-Channel 100-V (D-S) MOSFET

Manufacture

BiTEK

Page 1 Pages
Datasheet
Download B0210D Datasheet


B0210D Datasheet
B0210D
N-Channel 100-V (D-S) MOSFET
General Description
B0210D is the N-Channel logic enhancement mode
power field effect transistors to provide excellent
RDS(on), low gate charge and low gate resistance.
It’s up to 100V operation voltage is suitable for
switching mode power supply, SMPS, notebook
computer power management and other battery
powered circuits
Features
RDS(ON)=220m@VGS=10V
RDS(ON)=270m@VGS=4.5V
High Density Cell Design for Low RDS(ON)
Exceptional On-Resistance and
Maximum DC Current
TO-252-3 Package
Pin Configuration
D
G
S
Applications
LED backlight
LCD monitor
LCD TV
DC/DC Converter
Load Switch
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted):
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(tJ=150 )
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA=25
Maximum Power Dissipation
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Case
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
RθJC
N-Channel
100
±20
10
6
20
1.7
25
16
-55 to 150
5
Unit
V
V
A
A
A
W
/W
Confidential material for authorized user only and BiTEK
reserves the utmost right upon the information contained herein.
www.BiTEK.com.tw


Features Datasheet pdf B0210D N-Channel 100-V (D-S) MOSFET Gen eral Description B0210D is the N-Channe l logic enhancement mode power field ef fect transistors to provide excellent R DS(on), low gate charge and low gate re sistance. It’s up to 100V operation v oltage is suitable for switching mode p ower supply, SMPS, notebook computer po wer management and other battery powere d circuits Features RDS(ON)=220mΩ@VG S=10V RDS(ON)=270mΩ@VGS=4.5V High Den sity Cell Design for Low RDS(ON) Except ional On-Resistance and Maximum DC Curr ent TO-252-3 Package Pin Configuration D G S Applications LED backlight LC D monitor LCD TV DC/DC Converter Load S witch ℃Absolute Maximum Ratings (TA= 25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Volt age ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Curr ent Continuous Source Current (Diode C onduction) ℃TA=25 Maximum Power Dis sipation ℃TA=70 Operating Junction Temperature Thermal Resistance-Junction to Case Symbol VDSS V.
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