Purpose Transistor. GSTMMBT2222A Datasheet

GSTMMBT2222A Transistor. Datasheet pdf. Equivalent

Part GSTMMBT2222A
Description NPN General Purpose Transistor
Feature GSTMMBT2222A NPN General Purpose Transistors Product Description This device is designed as a gener.
Manufacture Globaltech
Datasheet
Download GSTMMBT2222A Datasheet

GSTMMBT2222A NPN General Purpose Transistors Product Descri GSTMMBT2222A Datasheet
Recommendation Recommendation Datasheet GSTMMBT2222A Datasheet





GSTMMBT2222A
GSTMMBT2222A
NPN General Purpose Transistors
Product Description
This device is designed as a general purpose
amplifier and switch.
Features
„ Lead(Pb)-Free
Packages & Pin Assignments
GSTMMBT2222AF(SOT-23)
Pin Description
1 Base
2 Emitter
3 Collector
Marking Information
P/N
GSTMMBT2222AF
Package
SOT-23
Part Marking
1P
Ordering Information
GS P/N
GSTMMBT2222A F
Pb Free Code
Part Number
GSTMMBT2222AF
Package
SOT-23
Quantity
3000 PCS
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GSTMMBT2222A
Absolute Maximum Ratings
TA=25°C
Symbol
Conditions
VCEO
Collector-Emitter Voltage
VCBO
VEBO
IC(DC)
PD
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Dissipation FR-5 Board (1)TA=25°C
Derate above 25°C
RθJA Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate
PD (2)TA=25°C
Derate above 25°C
RθJA Thermal Resistance Junction to Ambient
TJ Junction Temperature Range
TSTG
Storage Temperature Range
Note 1: FR-5=1.0 x 0.75 x 0.062 in
Note 2: Alumina=0.4 x 0.3 x 0.024in, 99.5% alumina
Typical
40
75
6.0
600
225
1.8
556
300
2.4
417
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
ICBO
IEBO
IBL
Conditions
Collector-Emitter Breakdown Voltage
(IC=10mA, IB=0mA)
Collector-Base Breakdown Voltage
(IC=10uA, IE=0mA)
Emitter-Base Breakdown Voltage
(IE=10uA, IC=0mA)
Collector Cutoff Current
(VCE=60V, VEB(off)=3.0V)
Collector Cutoff Current
(VCB=60V, IE=0mA)
(VCB=60V, IE=0mA , TA=125°C)
Emitter Cutoff Current
(VEB=3.0V, IC=0mA)
Base Cutoff Current
(VCE=60V, VEB(off)=3.0V)
DC Current Gain (IC=0.1mA, VCE=10V)
DC Current Gain (IC=1.0mA, VCE=10V)
DC Current Gain (IC=10mA, VCE=10V)
hFE
DC Current Gain (IC=10mA, VCE=10V,
TA=-55°C)
DC Current Gain (IC=150mA, VCE=10V) (3)
DC Current Gain (IC=150mA, VCE=1.0V) (3)
DC Current Gain (IC=500mA, VCE=10V) (3)
Min
40
75
6.0
-
-
-
-
35
50
75
35
100
50
40
Max
-
-
-
10
0.01
10
100
20
-
-
-
-
300
-
-
Unit
V
V
V
nA
uA
nA
nA
-
-
-
-
-
-
-
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