Planar Transistors. GSTD882 Datasheet

GSTD882 Transistors. Datasheet pdf. Equivalent

Part GSTD882
Description NPN Epitaxial Planar Transistors
Feature GSTD882 NPN Epitaxial Planar Transistors Product Description This device is designed as a general p.
Manufacture Globaltech
Datasheet
Download GSTD882 Datasheet

GSTD882 NPN Epitaxial Planar Transistors Product Descriptio GSTD882 Datasheet
Recommendation Recommendation Datasheet GSTD882 Datasheet





GSTD882
GSTD882
NPN Epitaxial Planar Transistors
Product Description
This device is designed as a general purpose
amplifier and switch.
Features
„ Lead(Pb)-Free
Packages & Pin Assignments
TO-252
Pin Description
1 Base
2 Collector
3 Emitter
Marking Information
P/N
GSTD882F
Package
TO-252
Ordering Information
Rank
(R) / (O) / (Y) / (GR)
Part Marking
D882
Part Number
GSTD882F(R or O or Y or GR)
Package
TO-252
Quantity
2500 PCS
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GSTD882
Absolute Maximum Ratings
TA=25°C
Symbol
Conditions
VCEO
VCBO
VEBO
IC(DC)
IC(Pulse)
IB(Pulse)
PD
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse) (1)
Base Current
Total Device Dissipation
TJ Junction Temperature Range
TSTG
Storage Temperature Range
Notes: 1.PW350us, duty cycle2%
TC=25°C
TA=25°C
Typical
30
40
5.0
3.0
7.0
0.6
10
1.25
150
-55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
Conditions
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
ICBO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
fT
Collector-Emitter Breakdown Voltage
(IC=10mA, IB=0mA)
Collector-Base Breakdown Voltage
(IC=100uA, IE=0mA)
Emitter-Base Breakdown Voltage
(IE=100uA, IC=0mA)
Collector Cutoff Current
(VCE=30V, IB=0mA)
Collector Cutoff Current
(VCB=40V, IE=0mA)
Emitter Cutoff Current
(VEB=6.0V, IC=0mA)
DC Current Gain
(IC=1.0A, VCE=2.0V)
DC Current Gain
(IC=100mA, VCE=2.0V)
Collector-Emitter Saturation Voltage
(IC=2.0A, IB=0.2mA)
Base-Emitter Saturation Voltage
(IC=2.0A, IB=0.2mA)
Current-Gain-Bandwidth Product
(IC=0.1mA, VCE=5.0V, f=10MHz)
Min
30
40
5.0
-
-
-
60
32
-
-
-
Classification of hFE(1)
Rank
Range
R
60-120
O
100-200
TYP
-
-
-
-
-
-
-
-
-
-
90
Y
160-320
Max
-
-
-
1.0
1.0
1.0
400
-
0.5
2.0
-
Unit
V
V
V
uA
uA
uA
-
-
V
V
MHz
GR
200-400
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