N-Channel MOSFET. GSMDK2314 Datasheet

GSMDK2314 MOSFET. Datasheet pdf. Equivalent

Part GSMDK2314
Description N-Channel MOSFET
Feature GSMDK2314 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field ef.
Manufacture Globaltech
Datasheet
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GSMDK2314 20V N-Channel MOSFETs Product Description These N GSMDK2314 Datasheet
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GSMDK2314
GSMDK2314
20V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 20V, 5.6A, RDS(ON)=26m@VGS=4.5V
„ Improved dv/dt capability
„ Fast switching
„ Suit for 1.8V Gate Drive Applications
„ Green Device Available
„ SOT-89 package design
Applications
„ Notebook
„ Load Switch
„ Hand-Held Instruments
Packages & Pin Assignments
GSMDK2314YF (SOT-89)
Pin Description
1 Gate
2 Drain
3 Source
Ordering Information
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GSMDK2314
Marking Information
Part Number
GSMDK2314YF
Package
SOT-89
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TA=25
TA=100
IDM Pulsed Drain Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
RθJA Thermal Resistance-Junction to Ambient
Quantity
1000pcs
Typical
20
±10
5.6
3.5
22.4
1.47
0.012
-55 to +150
-55 to +150
85
Unit
V
V
A
A
W
W/
/W
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