N-Channel MOSFET. GSM02N15 Datasheet

GSM02N15 MOSFET. Datasheet pdf. Equivalent

Part GSM02N15
Description N-Channel MOSFET
Feature GSM02N15 150V N Channel MOSFET Product Description These N-Channel enhancement mode power field eff.
Manufacture Globaltech
Datasheet
Download GSM02N15 Datasheet

GSM02N15 150V N Channel MOSFET Product Description These N- GSM02N15 Datasheet
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GSM02N15
GSM02N15
150V N Channel MOSFET
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
150V,1.4A, RDS(ON) =480m@VGS = 10V
Improved dv/dt capability
TSOP-6 package design
Applications
Portable Equipment
Battery Powered System
Load Switch
Packages & Pin Assignments
GSM02N15TSF (TSOP-6)
Pin
Symbo
l
1D
2D
3G
4S
5D
6D
Description
Drain
Drain
Gate
Source
Drain
Drain
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GSM02N15
Ordering Information
GS P/N
GSM02N15 TS F
Package Code
Pb Free Code
Part Number
GSM02N15TSF
Package
TSOP-6
Quantity Reel
3000 PCS
Marking Information
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TJ
TSTG
RθJA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
TC=25
TC=100
Power Dissipation (TC=25)
Power Dissipation (Derate above 25)
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
150
±20
1.4
0.88
5.6
1.56
0.012
-55 to +150
-55 to +150
80
Unit
V
V
A
A
W
W/
/W
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