N-Channel MOSFET. GSMDS3912 Datasheet

GSMDS3912 MOSFET. Datasheet pdf. Equivalent

Part GSMDS3912
Description N-Channel MOSFET
Feature GSMDS3912 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field ef.
Manufacture Globaltech
Datasheet
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GSMDS3912 30V N-Channel MOSFETs Product Description These N GSMDS3912 Datasheet
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GSMDS3912
GSMDS3912
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 30V, 9.0A, RDS(ON)=18m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ 100% EAS Guaranteed
„ Green Device Available
„ SOP-8 package design
Applications
„ MB / VGA / Vcore
„ POL Applications
„ SMPS 2nd SR
Packages & Pin Assignments
GSMDS3912SF (SOP-8)
Top View
Pin Description
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
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GSMDS3912
Ordering Information
GS P/N
GSMDS3912 S F
Package Code
Pb Free Code
Part Number
GSMDS3912SF
Package
SOP-8
Marking Information
Quantity Reel
4000 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
TA=25
TA=100
IAS Single Pulse Avalanche Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
RθJA
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
30
±20
9
5.7
36
32
8
2.5
0.02
-55 to +150
-55 to +150
50
Unit
V
V
A
A
mJ
A
W
W/
/W
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