N-Channel MOSFET. GSM3025S Datasheet

GSM3025S MOSFET. Datasheet pdf. Equivalent

Part GSM3025S
Description N-Channel MOSFET
Feature 30V N-Channel Enhancement Mode MOSFET Product Description GSM3025S, N-Channel enhancement mode MOSF.
Manufacture Globaltech
Datasheet
Download GSM3025S Datasheet

30V N-Channel Enhancement Mode MOSFET Product Description G GSM3025S Datasheet
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GSM3025S
30V N-Channel Enhancement Mode MOSFET
Product Description
GSM3025S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power
loss are needed in commercial industrial surface
mount applications.
Features
„ 30V/9.0A,RDS(ON)=32m@VGS=10V
„ 30V/7.0A,RDS(ON)=36m@VGS=4.5V
„ 30V/5.0A,RDS(ON)=42m@VGS=2.5V
„ Super high density cell design for extremely
low RDS (ON)
„ TO-252-2L package design
Applications
„ DC/DC Converter
„ Load Switch / CCFL Inverter
„ Power Management in Notebook Computer
Packages & Pin Assignments
GSM3025SDF (TO-252-2L)
Pin Description
1 Gate
2 Source
3 Drain
Ordering & Marking Information
GS P/N
GSM3025S D F
Package Code
Halogen Free/
Pb Free Code
Part Ordering No.
GSM3025SDF
Part Marking
3025S
Package
TO-252-2L
Quantity Reel
2500 PCS
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GSM3025S
Absolute Maximum Ratings
(TA=25ºC unless otherwise noted)
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Gate-Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25ºC
TA=70ºC
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25ºC
TA=70ºC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
30
±12
22
16
45
9.0
40
15
150
-55/150
62.5
Unit
V
V
A
A
A
W
ºC
ºC
ºC/ W
Electrical Characteristics
(TA=25ºC unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Static
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±16V
VDS=24V,VGS=0V
VDS=24V,VGS=0V,
TJ=85ºC
VDS5V,VGS=4.5V
VGS=10V,ID=9.0A
VGS=4.5V,ID=7.0A
VGS=2.5V,ID=5.0A
VDS=10V,ID=6.1A
IS=1.7A,VGS=0V
30
0.6
15
1.1
±100
1
30
24 32
26 36
32 42
20
0.8 1.2
Dynamic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V,VGS=10V,
ID=2.6A
td(on)
tr
td(off)
tf
Turn-On Time
Turn-Off Time
VDD=15V,
RL=15,ID=1.0A,
VGEN=10V,RG=6
320
70
30
3.0 4.5
1.6
0.6
8 12
12 18
15 30
8 15
Unit
V
nA
uA
A
m
S
V
pF
nC
ns
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