N-Channel MOSFET. GSMDD3094 Datasheet

GSMDD3094 MOSFET. Datasheet pdf. Equivalent

Part GSMDD3094
Description N-Channel MOSFET
Feature GSMDD3094 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field ef.
Manufacture Globaltech
Datasheet
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GSMDD3094 30V N-Channel MOSFETs Product Description These N GSMDD3094 Datasheet
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GSMDD3094
GSMDD3094
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 30V, 90A, RDS(ON)=4m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ 100% EAS guaranteed
„ Green Device Available
„ TO-252-2L package design
Applications
„ MB / VGA / Vcore
„ POL Applications
„ SMPS 2nd SR
Packages & Pin Assignments
GSMDD3094DF (TO-252-2L)
Top View
Description
Gate
Source
Drain
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GSMDD3094
Ordering Information
GS P/N
GSMDD3094 D F
Package Code
Pb Free Code
Part Number
GSMDD3094DF
Package
TO-252-2L
Marking Information
Quantity Reel
2500 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
TA=25
TA=100
IAS Single Pulse Avalanche Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
RθJA
RθJC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Typical
30
±20
90
57
360
125
50
88
0.59
-55 to +175
-55 to +175
62
1.7
Unit
V
V
A
A
mJ
A
W
W/
/W
/W
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