N-Channel MOSFET. GSMDD4906 Datasheet

GSMDD4906 MOSFET. Datasheet pdf. Equivalent

Part GSMDD4906
Description N-Channel MOSFET
Feature GSMDD4906 40V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field ef.
Manufacture Globaltech
Datasheet
Download GSMDD4906 Datasheet

GSMDD4906 40V N-Channel MOSFETs Product Description These N GSMDD4906 Datasheet
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GSMDD4906
GSMDD4906
40V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 40V, 50A, RDS(ON)=9.5m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ Green Device Available
„ TO-252-2L package design
Applications
„ Notebook
„ Load Switch
„ LED Applications
„ Hand-Held Device
Packages & Pin Assignments
GSMDD4906DF (TO-252-2L)
Top View
Description
Gate
Source
Drain
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GSMDD4906
Ordering Information
GS P/N
GSMDD4906 D F
Package Code
Pb Free Code
Part Number
GSMDD4906DF
Package
TO-252-2L
Marking Information
Quantity Reel
2500 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TA=25
TA=100
IDM Pulsed Drain Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ
TSTG
RθJA
RθJC
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Typical
40
±20
50
31.6
200
54
0.43
-55 to +150
-55 to +150
62
2.31
Unit
V
V
A
A
W
W/
/W
/W
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