N-Channel MOSFET. GSMDC2604Z Datasheet

GSMDC2604Z MOSFET. Datasheet pdf. Equivalent

Part GSMDC2604Z
Description N-Channel MOSFET
Feature GSMDC2604Z 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field e.
Manufacture Globaltech
Datasheet
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GSMDC2604Z 20V N-Channel MOSFETs Product Description These GSMDC2604Z Datasheet
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GSMDC2604Z
GSMDC2604Z
20V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 20V, 80A, RDS(ON)=3.5m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ 100% EAS guaranteed
„ Green Device Available
„ DFN3X3-8L package design
Applications
„ MB / VGA / Vcore
„ POL Applications
„ SMPS 2nd SR
Packages & Pin Assignments
GSMDC2604ZFF (DFN3X3-8L)
Top View
Pin Description
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
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GSMDC2604Z
Ordering Information
GS P/N
GSMDC2604Z F F
Package Code
Pb Free Code
Part Number
GSMDC2604ZFF
Package
DFN3X3-8L
Marking Information
Quantity
3000 PCS
Absolute Maximum Ratings
TC=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Continuous Drain Current
(Chip Limitation)
TC=25
TC=100
IDM Pulsed Drain Current
PD Power Dissipation (TC=25)
Power Dissipation (Derate above 25)
TJ
TSTG
RθJA
RθJC
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Typical
20
±12
80
51
320
66
0.53
-55 to +175
-55 to +175
62
2
Unit
V
V
A
A
W
W/
/W
/W
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