N-Channel MOSFET. GSMDC3912Z Datasheet

GSMDC3912Z MOSFET. Datasheet pdf. Equivalent

Part GSMDC3912Z
Description N-Channel MOSFET
Feature GSMDC3912Z 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field e.
Manufacture Globaltech
Datasheet
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GSMDC3912Z 30V N-Channel MOSFETs Product Description These GSMDC3912Z Datasheet
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GSMDC3912Z
GSMDC3912Z
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 30V, 25A, RDS(ON)=18m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ 100% EAS guaranteed
„ Green Device Available
„ DFN3X3-8L package design
Applications
„ MB / VGA / Vcore
„ Load Switch
„ Hand-Held Instrument
Packages & Pin Assignments
GSMDC3912ZFF (DFN3X3-8L)
Top View
Pin Description
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
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GSMDC3912Z
Ordering Information
GS P/N
GSMDC3912Z F F
Package Code
Pb Free Code
Part Number
GSMDC3912ZFF
Package
DFN3X3-8L
Marking Information
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
TA=25
TA=100
IAS Single Pulse Avalanche Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
RθJA
RθJC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Typical
30
±20
25
16
100
32
8
21
0.17
-55 to +150
-55 to +150
62
6
Unit
V
V
A
A
mJ
A
W
W/
/W
/W
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