P-Channel MOSFET. GSMDS2305 Datasheet

GSMDS2305 MOSFET. Datasheet pdf. Equivalent

Part GSMDS2305
Description P-Channel MOSFET
Feature GSMDS2305 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field ef.
Manufacture Globaltech
Datasheet
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GSMDS2305 20V P-Channel MOSFETs Product Description These P GSMDS2305 Datasheet
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GSMDS2305
GSMDS2305
20V P-Channel MOSFETs
Product Description
These P-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ -20V, -11A, RDS(ON)=16m@VGS=-4.5V
„ Improved dv/dt capability
„ Fast switching
„ Suit for -1.8V Gate Drive Applications
„ Green Device Available
„ SOP-8 package design
Applications
„ Notebook
„ Load Switch
„ Networking
Packages & Pin Assignments
GSMDS2305SF (SOP-8)
Pin Description Pin
1 Source 5
2 Source 6
3 Source 7
4 Gate 8
Description
Drain
Drain
Drain
Drain
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GSMDS2305
Ordering Information
Part Number
GSMDS2305SF
Marking Information
Package
SOP-8
Quantity Reel
4000 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TA=25
TA=100
IDM Pulsed Drain Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ
TSTG
RθJA
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
-20
±10
-11
-7
-44
2.5
0.02
-55 to +150
-55 to +150
50
Unit
V
V
A
A
W
W/
/W
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