N-Channel MOSFET. GSMEB2516Q Datasheet

GSMEB2516Q MOSFET. Datasheet pdf. Equivalent

Part GSMEB2516Q
Description Dual N-Channel MOSFET
Feature GSMEB2516Q 20V Dual N-Channel MOSFETs Product Description These N-Channel enhancement mode power fi.
Manufacture Globaltech
Datasheet
Download GSMEB2516Q Datasheet

GSMEB2516Q 20V Dual N-Channel MOSFETs Product Description T GSMEB2516Q Datasheet
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GSMEB2516Q
GSMEB2516Q
20V Dual N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 20V, 11A, RDS(ON)=8.2m@VGS=4.5V
„ Improved dv/dt capability
„ Fast switching
„ G-S ESD Protection Diode Embedded
„ Green Device Available
„ DFN2X3-6L package design
Applications
„ Handheld Instruments
„ POL Applications
„ Battery Protection Applications
Packages & Pin Assignments
GSMEB2516QFF (DFN2X3-6L)
Bottom View
Pin Description
1 Source 1
2 Source 1
3 Gate 1
4 Gate 2
5 Source 2
6 Source 2
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GSMEB2516Q
Ordering Information
GS P/N
GSMEB2516Q F F
Package Code
Pb Free Code
Part Number
GSMEB2516QFF
Package
DFN2X3-6L
Marking Information
Quantity
3000pcs
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TA=25
TA=100
IDM Pulsed Drain Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ
TSTG
RθJA
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
20
±12
11
8.8
70
1.56
0.0125
-55 to +150
-55 to +150
80
Unit
V
V
A
A
W
W/
/W
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