P-Channel MOSFET. GSMDS3807 Datasheet

GSMDS3807 MOSFET. Datasheet pdf. Equivalent

Part GSMDS3807
Description Dual P-Channel MOSFET
Feature GSMDS3807 30V Dual P-Channel MOSFETs Product Description These Dual P-Channel enhancement mode powe.
Manufacture Globaltech
Datasheet
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GSMDS3807 30V Dual P-Channel MOSFETs Product Description Th GSMDS3807 Datasheet
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GSMDS3807
GSMDS3807
30V Dual P-Channel MOSFETs
Product Description
These Dual P-Channel enhancement mode power
field effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ -30V, -7A, RDS(ON)=23m@VGS=-10V
„ Improved dv/dt capability
„ Fast switching
„ Suit for -4.5V Gate Drive Applications
„ Green Device Available
„ SOP-8 package design
Applications
„ MB / VGA / Vcore
„ Load Switch
„ LED Applications
„ POL Applications
Packages & Pin Assignments
GSMDS3807SF (SOP-8)
Pin No
1
2
3
4
Description
Source 1
Gate 1
Source 2
Gate 2
Pin No
5
6
7
8
Description
Drain 2
Drain 2
Drain 1
Drain 1
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GSMDS3807
Ordering Information
GS P/N
GSMDS3807 S F
Package Code
Halogen Free/
Pb Free Code
Part Number
GSMDS3807SF
Package
SOP-8
Quantity Reel
4000 PCS
Marking Information
Absolute Maximum Ratings
(TA=25ºC unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
PD
TJ
TSTG
RθJA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25ºC
TC=100ºC
Pulsed Drain Current
Power Dissipation
TC=25ºC
Derate above 25ºC
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
-30
±20
-7
-4.43
-28
2.1
0.017
-55 to 150
-55 to 150
60
Unit
V
V
A
A
W
W/ºC
ºC
ºC
ºC/ W
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