Dual-Channel MOSFET. GSM2120P Datasheet

GSM2120P MOSFET. Datasheet pdf. Equivalent

Part GSM2120P
Description N+P Dual-Channel MOSFET
Feature GSM2120P 20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode p.
Manufacture Globaltech
Datasheet
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GSM2120P 20V N+P Dual Channel MOSFETs Product Description T GSM2120P Datasheet
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GSM2120P
GSM2120P
20V N+P Dual Channel MOSFETs
Product Description
These N+P dual Channel enhancement mode
power field effect transistors are using trench
DMOS technology. This advanced technology has
been especially tailored to minimize on-state
resistance, provide superior switching
performance, and withstand high energy pulse in
the avalanche and commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ N-Channel
20V, 0.8A, RDS(ON)=300m@VGS=4.5V
„ P-Channel
-20V, -0.4A, RDS(ON)=600m@VGS=-4.5V
„ Fast switching
„ Suit for 1.5V/-1.5V Gate Drive Applications
„ Green Device Available
„ SOT-363 package design
Applications
„ Notebook
„ Load Switch
„ Networking
„ Hand-held Instruments
Packages & Pin Assignments
GSM2120PX6F (SOT-363)
Top Views
Pin Description
1 Source 1
2 Gate 1
3 Drain 2
4 Source 2
5 Gate 2
6 Drain 1
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GSM2120P
Ordering Information
Marking Information
Part Number
GSM2120PX6F
Package
SOT-363
Part Marking
pYM
Quantity
3000pcs
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS
VGS
ID
IDM
PD
TJ
TSTG
RθJA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(TJ=150)
Pulsed Drain Current
TA=25
TA=100
Power Dissipation
TA=25
Derate above 25
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
N-Channel
20
±8
P-Channel
-20
±8
800 -400
510 -250
3.2 -1.6
275
2.2
-55 to +150
-55 to +150
450
Unit
V
V
mA
A
mW
mW/
/W
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