MOSFET. GSM4600 Datasheet

GSM4600 MOSFET. Datasheet pdf. Equivalent

Part GSM4600
Description MOSFET
Feature GSM4600 100V N & P Pair Enhancement Mode MOSFET Product Description These miniature surface mount M.
Manufacture Globaltech
Datasheet
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GSM4600 100V N & P Pair Enhancement Mode MOSFET Product Des GSM4600 Datasheet
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GSM4600
GSM4600
100V N & P Pair Enhancement Mode MOSFET
Product Description
These miniature surface mount MOSFETs utilize
High Cell Density process. Low RDS(ON) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry.
Typical applications are PWM DC-DC converters,
power management in portable and battery
powered products such as computers, printers,
battery charger, telecommunication power system,
and telephones power system.
Packages & Pin Assignments
GSM4600SF(SOP-8)
Features
N-Channel
„ 100V, 9.8A, RDS(ON)=155m@VGS=10V
„ 100V, 9.8A, RDS(ON)=175m@VGS=4.5V
P-Channel
„ -100V, -9A, RDS(ON)=160m@VGS=-10V
„ -100V, -9A, RDS(ON)=185m@VGS=-4.5V
„ Fast switching speed
„ SOP-8 package design
Applications
„ Power Management in Note
„ Portable Equipment
„ Battery Powered System
„ Load Switch
„ LCD Display inverter
Pin Description Pin Description
1
Source1
5
Drain2
2 Gate1 6 Drain2
3
Source2
7
Drain1
4 Gate2 8 Drain1
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GSM4600
Ordering Information
GS P/N
GSM4600 S F
Part Number
GSM4600SF
Package Code
Halogen Free/
Pb Free Code
Package
SOP-8
Quantity Reel
4000 PCS
Marking Information
Absolute Maximum Ratings (N-Channel)
(TA=25ºC unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
PD
TJ
TSTG
TL
RθJA
RθJC
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (*1)
Pulsed Drain Current (*2)
TA=25ºC
TA=70ºC
Power Dissipation (*1)
TA=25ºC
TA=70ºC
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature(1/16” from case for 10sec)
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Typical
100
±20
9.8
7
37
2.5
1.6
-55 to 150
-55 to 150
275
50
30
Unit
V
V
A
A
W
ºC
ºC
ºC
ºC/ W
ºC/ W
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