MOSFET. GSM6332 Datasheet

GSM6332 MOSFET. Datasheet pdf. Equivalent

Part GSM6332
Description MOSFET
Feature N & P Pair Enhancement Mode MOSFET Product Description The GSM6332 is the N and P Pair enhancement .
Manufacture Globaltech
Datasheet
Download GSM6332 Datasheet

N & P Pair Enhancement Mode MOSFET Product Description The GSM6332 Datasheet
Recommendation Recommendation Datasheet GSM6332 Datasheet





GSM6332
N & P Pair Enhancement Mode MOSFET
Product Description
The GSM6332 is the N and P Pair enhancement
mode MOSFET, uses Advanced Trench
Technology to provide excellent RDS(ON) , low gate
charge.
These devices are particularly suited for low
voltage power management, such as smart phone
and notebook computer and other battery powered
circuits, and low in-line power loss are needed in
commercial industrial surface mount applications.
Features
„ N-Channel
20V/1.0A,RDS(ON)=280m@VGS=4.5V
20V/0.8A,RDS(ON)=340m@VGS=2.5V
20V/0.7A,RDS(ON)=580m@VGS=1.8V
„ P-Channel
-20V/-1.0A,RDS(ON)= 600m@VGS=-4.5V
-20V/-0.8A,RDS(ON)= 800m@VGS=-2.5V
-20V/-0.7A,RDS(ON)= 1440m@VGS=-1.8V
„ Low-Voltage Operation
„ High-Speed Circuits
„ Low Battery Voltage Operation
„ SOT-363 package design
Applications
„ Load Switch for Portable Devices, Smart
Phones, Pagers.
Packages & Pin Assignments
GSM6332X6F(SOT-363/SC-70-6L)
1 Source 1
2 Gate 1
3 Drain 2
4 Source 2
5 Gate 2
6 Drain 1
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GSM6332
Ordering Information
Marking Information
Part Number
GSM6332X6F
Package
SOT-363
Part Marking
32YW
Absolute Maximum Ratings
TA=25ºC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TJ=150ºC)
Pulsed Drain Current
TA =25ºC
TA =70ºC
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA =25ºC
TA =70ºC
Storage Temperature Range
Typical
N-Channel P-Channel
20 -20
±12 ±12
1.0 -1.0
0.7 -0.7
6 -6
1 -1
0.3
0.2
-55/150
-55/150
Unit
V
V
A
A
A
W
ºC
ºC
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