PIN Photodiode. TEFD4300F Datasheet

TEFD4300F Photodiode. Datasheet pdf. Equivalent

Part TEFD4300F
Description Silicon PIN Photodiode
Feature www.vishay.com TEFD4300F Vishay Semiconductors Silicon PIN Photodiode DESCRIPTION TEFD4300F is a .
Manufacture Vishay
Datasheet
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TEFD4300F
www.vishay.com
TEFD4300F
Vishay Semiconductors
Silicon PIN Photodiode
DESCRIPTION
TEFD4300F is a silicon PIN photodiode with high radiant
sensitivity in black, T-1 plastic package with daylight
blocking filter. Filter bandwitdth is matched with 850 nm to
950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High radiant sensitivity
• Daylight blocking filter matched with 850 nm to
950 nm emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Package matched with IR emitter series
VSLB3940, TSUS4300, and TSAL4400
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector for data transmission
• Optical switches
• Counters and sorters
• Interrupters
• Encoders
• Position sensors
PRODUCT SUMMARY
COMPONENT
TEFD4300F
Note
• Test condition see table “Basic Characteristics”
Ira (μA)
17
ϕ (deg)
± 20
λ0.5 (nm)
770 to 1070
ORDERING INFORMATION
ORDERING CODE
TEFD4300F
TEFD4300F-QS21
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Tape and reel
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 10 000 pcs, 2000 pcs/reel
PACKAGE FORM
T-1
T-1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction / ambient
Tamb 25 °C
t 3 s, 2 mm from case
Connected with Cu wire, 0.14 mm2
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
60
215
100
-40 to +100
-40 to +100
260
450
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.3, 13-Jan-17
1 Document Number: 83472
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



TEFD4300F
www.vishay.com
TEFD4300F
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of VO
Short circuit current
Temperature coefficient of Ik
Reverse light current
Angle of half sensitivity
IF = 50 mA
IR = 100 μA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 5 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
VF
V(BR)
Iro
CD
CD
VOC
TKVo
Ik
TKIk
Ira
ϕ
-
60
-
-
-
-
-
-
-
9
-
Wavelength of peak sensitivity
λp -
Range of spectral bandwidth
λ0.5 770
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
-
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
-
TYP.
1
-
0.15
3.3
1.2
350
-2.6
15
0.1
17
± 20
950
-
100
100
MAX.
-
-
3
-
-
-
-
-
-
27
-
-
1070
-
-
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
ns
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10-6
10-7
10-8
VR = 10 V
10-9
10-10
10-11
10-12
0
20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2
V =5V
R
λ = 950 nm
1.0
0.8
0.6
0
94 8416
20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.3, 13-Jan-17
2 Document Number: 83472
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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