N-Channel MOSFET. APM4030NU Datasheet

APM4030NU MOSFET. Datasheet pdf. Equivalent

Part APM4030NU
Description N-Channel MOSFET
Feature APM4030NU N-Channel Enhancement Mode MOSFET Features Pin Description • 40V/35A, RDS(ON)=17mΩ (ty.
Manufacture ANPEC
Datasheet
Download APM4030NU Datasheet

APM4030NU N-Channel Enhancement Mode MOSFET Features Pin APM4030NU Datasheet
Recommendation Recommendation Datasheet APM4030NU Datasheet





APM4030NU
APM4030NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
40V/35A,
RDS(ON)=17m(typ.) @ VGS=10V
RDS(ON)=26m(typ.) @ VGS=4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available (RoHS
Compliant)
Applications
Inverter Application in LCM and LCD TV
GD
S
Top View of TO-252
(2)
D1
(1)
G1
S1
(3)
N-Channel MOSFET
Ordering and Marking Information
APM4030N
Assembly Material
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150o C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
APM4030N U : APM4030N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B. 4 - Feb., 2008
1
www.anpec.com.tw



APM4030NU
APM4030NU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA = 25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
TC=25°C
TC=100°C
ID Continuous Drain Current
TC=25°C
TC=100°C
PD Maximum Power Dissipation
TC=25°C
TC=100°C
RθJC Thermal Resistance-Junction to Case
Mounted on PCB of 1in2 Pad Area
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID Continuous Drain Current
TA=25°C
TA=100°C
PD Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA Thermal Resistance-Junction to Ambient
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID Continuous Drain Current
TA=25°C
TA=100°C
PD Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA Thermal Resistance-Junction to Ambient
Rating
40
±20
150
-55 to 150
10
80
52
35
23
50
20
2.5
32
20
8
5
2.5
1
50
24
16
6
4
1.6
0.6
75
Unit
V
°C
°C
A
A
A
W
°C/W
A
A
W
°C/W
A
A
W
°C/W
Copyright © ANPEC Electronics Corp.
Rev. B. 4 - Feb., 2008
2
www.anpec.com.tw





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)