MOSFET. 2N7002E Datasheet

2N7002E MOSFET. Datasheet pdf. Equivalent

Part 2N7002E
Description MOSFET
Feature 2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 Features • Low RDS(on) • Small.
Manufacture ON Semiconductor
Datasheet
Download 2N7002E Datasheet

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2N7002E
2N7002E
Small Signal MOSFET
60 V, 310 mA, Single, N−Channel, SOT−23
Features
Low RDS(on)
Small Footprint Surface Mount Package
Trench Technology
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Low Side Load Switch
Level Shift Circuits
DC−DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
60
Gate−to−Source Voltage
Drain Current (Note 1)
Steady State
TA = 25°C
TA = 85°C
VGS
ID
±20
260
190
Unit
V
V
mA
t<5s
Power Dissipation (Note 1)
Steady State
t<5s
TA = 25°C
TA = 85°C
PD
310
220
mW
300
420
Pulsed Drain Current (tp = 10 ms)
Operating Junction and Storage
Temperature Range
IDM
TJ, TSTG
1.2
−55 to
+150
A
°C
Source Current (Body Diode)
IS 300 mA
Lead Temperature for Soldering Purposes TL 260 °C
(1/8from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Junction−to−Ambient − Steady State
(Note 1)
Symbol
RqJA
Max
417
Unit
°C/W
Junction−to−Ambient − t 5 s (Note 1)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
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V(BR)DSS
60 V
RDS(on) MAX
3.0 W @ 4.5 V
2.5 W @ 10 V
ID MAX
(Note 1)
310 mA
Simplified Schematic
N−Channel
3
1
2
(Top View)
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
703 MG
G
1
Gate
2
Source
703 = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
2N7002ET1G
Package
SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
October, 2016 − Rev. 5
1
Publication Order Number:
2N7002E/D



2N7002E
2N7002E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
60
75
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
IDSS
IGSS
VGS(TH)
VGS(TH)/TJ
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
VGS = VDS, ID = 250 mA
1
500
±100
mA
nA
1.0
4.4
2.5 V
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 240 mA
0.86 2.5
W
VGS = 4.5 V, ID = 50 mA
1.1 3.0
Forward Transconductance
gFS VDS = 5 V, ID = 200 mA
530 mS
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1 MHz,
VDS = 25 V
26.7 40
4.6
2.9
pF
Total Gate Charge
QG(TOT)
0.81 nC
Threshold Gate Charge
Gate−to−Source Charge
QG(TH)
QGS
VGS = 5 V, VDS = 10 V;
ID = 240 mA
0.31
0.48
Gate−to−Drain Charge
QGD
0.08
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time
td(ON)
1.7 ns
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 10 V, VDD = 30 V,
ID = 200 mA, RG = 10 W
1.2
4.8
Fall Time
tf
3.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 200 mA
TJ = 85°C
0.79 1.2
0.7
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300 ms, duty cycle 2%
3. Switching characteristics are independent of operating junction temperatures
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