2N7002E

2N7002E Small Signal MOSFET Single N−Channel, 60 V, 310 mA, 2.5 Ohm Features Low RDS(on) Small Footprint Surface Mount Package Trench Technology S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Low Side Load Switch Level Shift Circuits DC−DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1) Steady State VDSS 60 V VGS ±20 V ID TA = 25°C TA = 85°C mA 260 190 t<5s Power Dissipation (Note 1) Steady State t<5s TA = 25°C TA = 85°C PD 310 220 mW 300 420 Pulsed Drain Current (tp = 10 ms) Operating Junction and Storage Temperature Range IDM 1.2 A TJ, TSTG −55 to °C +150 Source Current (Body Diode) IS 300 mA Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 417 °C/W Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq ...