MOSFET. 2N7002E Datasheet

2N7002E MOSFET. Datasheet pdf. Equivalent

Part 2N7002E
Description MOSFET
Feature Enhancement Mode MOSFET (N-Channel) 2N7002E Enhancement Mode MOSFET (N-Channel) Features • High den.
Manufacture TAITRON
Datasheet
Download 2N7002E Datasheet

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2N7002E
Enhancement Mode
MOSFET (N-Channel)
2N7002E
Enhancement Mode MOSFET (N-Channel)
Features
High density cell design for low RDS(ON).
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
RoHS Compliance, Halogen Free
SOT-23
Mechanical Data
Case:
Terminals:
Weight:
SOT-23, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.008 gram
Maximum Ratings @ TA=25°C unless noted otherwise
Symbol
VDSS
VDGR
VGSS
ID
IDP
Description
Drain-Source Voltage
Drain-Gate Voltage (RGS 1M)
Gate-Source Voltage Continuous
Gate-Source Voltage Non Repetitive (tp <50µs)
Drain Current Continuous
Drain Current Pulsed
PD Total Power Dissipation
TJ
TSTG
RθJA
Junction Temperature
Storage Temperature
Junction to Ambient
2N7002Z
60
60
±20
±40
300
800
200
1.6
150
-55 ~ +150
625
Unit
V
V
V
V
mA
mA
mW
mW/°C
°C
°C
°C/W
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/CZ
Page 1 of 8



2N7002E
Enhancement Mode MOSFET (N-Channel)
Electrical Characteristics @ TA=25°C unless noted otherwise
Off Characteristics
2N7002E
Symbol
V(BR)DSS
IDSS
IGSS
Description
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
On Characteristics (Note)
Min.
60
-
-
Typ.
-
-
-
Max.
-
1
±100
Unit
V
μA
nA
Conditions
VGS=0V, ID=10µA
VDS=60V, VGS=0V
VGS=±20V, VDS=0V
Symbol
VGS(th)
Description
Gate Threshold Voltage
VDS(ON) Drain-Source On-Voltage
ID(ON)
On-State Drain Current
RDS(ON) Static Drain-Source On Resistance
Dynamic Characteristics
Min.
1.0
-
-
0.5
-
-
Typ.
2.1
0.6
0.09
2.7
1.2
1.7
Max.
2.5
3.75
1.5
-
3.5
7.5
Unit
V
V
V
A
Conditions
VGS=VDS, ID=250uA
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VGS=10V, VDS2VDS(ON)
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
Symbol
Ciss
Coss
Crss
Description
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note)
Min.
-
-
-
Typ.
25
11
4.0
Max.
50
25
5.0
Unit
pF
Conditions
VDS=25V, VGS=0V,
f=1MHz
Symbol
ton
Description
Turn-On Time
toff Turn-Off Time
Min.
-
Typ.
-
Max.
20
- - 20
Unit
nS
Conditions
ID=200mA, VDD=30V,
VGS=10V, RL=150,
RGEN=25
ID=200mA, VDD=30V,
VGS=10V, RL=25,
RGEN=25
www.taitroncomponents.com
Rev. A/CZ
Page 2 of 8





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