N-Channel MOSFET. IRFD1Z2 Datasheet

IRFD1Z2 MOSFET. Datasheet pdf. Equivalent

Part IRFD1Z2
Description N-Channel MOSFET
Feature Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2.
Manufacture Harris Semiconductor
Datasheet
Download IRFD1Z2 Datasheet

Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 IRFD1Z2 Datasheet
~D~·~~U FIELD EFFECT POVVER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPE IRFD1Z2 Datasheet
Recommendation Recommendation Datasheet IRFD1Z2 Datasheet





IRFD1Z2
Semiconductor
July 1998
IRFD1Z0, IRFD1Z1,
IRFD1Z2, IRFD1Z3
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm,
N-Channel Power MOSFETs
Features
• 0.4A and 0.5A, 60V and 100V
• rDS(ON) = 2.4and 3.2
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17451.
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD1Z0
HEXDIP
IRFD1Z0
IRFD1Z1
HEXDIP
IRFD1Z1
IRFD1Z2
HEXDIP
IRFD1Z2
IRFD1Z3
HEXDIP
IRFD1Z3
NOTE: When ordering, use the entire part number.
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2313.1



IRFD1Z2
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFD1Z0
IRFD1Z1
Drain to Source (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . .VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . .
100
100
0.5
4.0
±20
1.0
0.008
60
60
0.5
4.0
±20
1.0
0.008
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg
-55 to 150
300
260
-55 to 150
300
260
IRFD1Z2
100
100
0.4
3.2
±20
1.0
0.008
-55 to 150
300
260
IRFD1Z3
60
60
0.4
3.2
±20
1.0
0.008
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRFD1Z0, IRFD1Z2
BVDSS ID = 250µA, VGS = 0V (See Figure 9)
100 -
-
V
IRFD1Z1, IRFD1Z3
60 -
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRFD1Z0, IRFD1Z1
VGS(TH)
IDSS
ID(ON)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS
TC =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0V,
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
(See Figure 6)
2.0 - 4.0
V
- - 25 µA
- - 250 µA
0.5 -
-
A
IRFD1Z2, IRFD1Z3
0.4 -
-
A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRFD1Z0, IRFD1Z1
IGSS
rDS(ON)
VGS = ±20V
ID = 0.25A, VGS = 10V (See Figures 7, 8)
- - ±100 nA
- 2.2 2.4
IRFD1Z2, IRFD1Z3
- 2.8 3.2
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gfs
td(ON)
tr
td(OFF)
tf
VDS > ID(ON) x rDS(ON)MAX, ID = 0.25A
VDD 0.5 x Rated BVDSS, ID = 0.25A,
RG = 50(Figures 14, 15, 16)
RL = 198for BVDSS = 100V
RL = 118for BVDSS = 60V
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
0.25
-
-
-
-
0.35
10
15
15
10
-
20
25
25
20
S
ns
ns
ns
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
VGS = 10V, ID = 1.2A, VDS = 0.8 x Rated BVDSS
(Figures 13, 16, 17) Gate Charge is Essentially
Independent of Operating Temperature
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 10)
-
-
-
-
-
-
2.0 3.0
1.0 -
1.0 -
50 -
20 -
5-
nC
nC
nC
pF
pF
pF
5-2





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