power switch. AACT810D Datasheet

AACT810D switch. Datasheet pdf. Equivalent

Part AACT810D
Description AC Thyristor Triac power switch
Feature   A  DV AC Thyristor Triac power switch AACT808D/10D General Description Available either in throu.
Manufacture ADV
Datasheet
Download AACT810D Datasheet

  A  DV AC Thyristor Triac power switch AACT808D/10D Gener AACT810D Datasheet
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AACT810D
 
A  DV
AC Thyristor Triac power switch
AACT808D/10D
General Description
Available either in through-hole or surface-mount packages,
the AACT8 suitable for general purpose AC switching. They
can be used as an ON/OFF function in applications such as
static relays, heating regulation,induction motor starting circuits...
or for phase control operation in light dimmers,motor speed
controllers,...
Features
Repetitive Peak Off-State Voltage: 800Vand1000V
R.M.S On-State Current ( IT(RMS)= 8A )
Very high immunity to false turn-on by dV/dt
Triggering in three quadrants only
Pin compatible with standard triacs
Safe clamping capability for low energy over-voltage transients
These Devices are Pb-Free and are RoHS Compliant
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 100 °C
Conditions
AACT808D
AACT810D
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 125°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 125°C
Average Gate Power Dissipation(Tj=125°C)
Peak Gate Power Dissipation(tp=20us,Tj=125°C)
Operating Junction Temperature
Storage Temperature
2.T2
3.Gate
1.T1
2
123
TO-251
Ratings
800
1000
8
80/84
32
100
1
0.1
5
- 40 ~ 125
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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Feb,2013 -Rev.3.01



AACT810D
 
A  DV
AACT808D/10D
Electrical Characteristics ( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Q1-Q2-Q3
NonTrigger Gate
Voltage
Q1-Q2-Q3 Gate Trigger Voltage
Q1-Q2-Q3 Gate Trigger Current
Q1-Q2-Q3
Holding Current
Q1-Q3
Q2
Latching Current
Critical Rate of Rise of Off-State
Voltage
Junction to case (AC)
Junction to ambient
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 125°C
ITM = 11A, tp = 380 μs
VD = 2/3VDRM RL = 3.3 k
Tj = 125°C
VD = 12V RL = 33
IT = 0.1A
IG = 1.2 IGT
VD = 2/3VDRM gate open
Tj = 125°C
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Max.
Max.
AACT808D/10D
S Blank
10
1.25
1.55
0.2
1.5
10 35
25 40
25 40
30 55
600 1000
2.5
100
Unit
uA
mA
V
V
V
mA
mA
mA
V/μs
°C/W
°C/W
FIG.1:Quadrant are defined and the gate trigger test circuit
Q2(T2+G-)
RL
T2+
RL
Q1(T2+G+)
VD VD
A
V
RG
A
V
RG
G-
RL
G+
VD
A
V
RG
Q3(T2-G-)
T2-
 
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Feb,2013 -Rev.3.01





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