ADV
ADM2P06W
P-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMM...
ADV
ADM2P06W
P-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS -60V
ID -2.3A
RDS(ON) (mΩ) 180mΩ
Features:
● Excellent Cdv/dt effect decline ● Super Low Gate Charge
●100% EAS Guaranteed ● Advanced Trench technology ● Lead-Free,RoHS Compliant
SOT223
1
1 2 2 3 3
2
Description:
The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.The ADM2P06W meets the RoHS and Green Product requirement with full function reliability approved.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG IS
Storage Temperature Range Diode Continuous Forward Current（1,4）
TC =25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain ...
