Effect Transistor. ADM2P06W Datasheet

ADM2P06W Transistor. Datasheet pdf. Equivalent

Part ADM2P06W
Description P-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM2P06W  P-Channel Logic Level Enhancement Mode Field Effect Tran.
Manufacture ADV
Datasheet
Download ADM2P06W Datasheet

                        ADV     ADM2P06W  P-Channel Logic ADM2P06W Datasheet
Recommendation Recommendation Datasheet ADM2P06W Datasheet





ADM2P06W
                       
ADV  
 
ADM2P06W 
P-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
-60V
ID
-2.3A
RDS(ON) (mΩ)
180mΩ
Features:
Excellent Cdv/dt effect decline
Super Low Gate Charge
100% EAS Guaranteed
Advanced Trench technology
Lead-Free,RoHS Compliant
SOT223
1 
1  2 
2  3 
3 
2
Description:
The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power switching and load switch applications.The ADM2P06W meets
the RoHS and Green Product requirement with full function reliability approved.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current1,4
TC =25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested2
ID Continuous Drain Current1
PD Maximum Power Dissipation3
TC=25°C
TC=25°C
TC=70°C
TA=25°C
Ratings
-60
±20
150
-55 to 150
-2.3
-12
-2.3
-1.8
1.5
Unit
V
°C
°C
A
A
A
A
W
Thermal Characteristics
Symbol
RthJC
RthJA
Parameter
Thermal resistance junction-case max1
Thermal resistance junction-ambient max1
Ratings
85
48
Unit
°C/W
°C/W
 
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www.advsemi.com
Feb,2013 -Rev.3.01



ADM2P06W
                       
ADV  
 
ADM2P06W 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
Min. Typ.
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=-250uA
VDS=-48V,VGS=0V
IDSS
Zero Gate Voltage Drain Current
TJ=25°C
VDS=-48V,VGS=0V
TJ=55°C
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=-250A
IGSS
RDS(ON)
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-SourceOn-stateResistance2VGS= -10V, IDS=-2A
-60
,
--
,
--
-1.5
--
--
--
--
--
-2.0
--
140
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= -15V,
Frequency=1MHz
-- 428
-- 39
-- 26
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-30V,
ID= -2A, VGS= -10V,
RGEN=3.3Ω
 
VDS=-48V, VGS= -10V,
IDS=-2A
-- 4.1
-- 2.1
-- 20.3
-- 21
-- 8.3
-- 1.8
-- 1.6
Diode Characteristics
VSD Diode Forward Voltage2
NOTES:
ISD = -1A, VGS = 0
-- --
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
--
1
5
-2.5
±100
180
600
55
36.4
8.2
38
40.6
42
11.6
2.52
2.25
-1.2
Unit
V
uA
V
nA
m
pF
ns
nC
V
 
2/5
www.advsemi.com
Feb,2013 -Rev.3.01





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